公开(公告)号：US10566328B2

公开(公告)日：2020-02-18

申请号：US15904555

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Bala Haran ,  Christopher Sheraw ,  Mahender Kumar

IPC: H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L29/423 ,  H01L21/3105 ,  H01L21/311

Abstract: One illustrative integrated circuit product disclosed herein includes a plurality of FinFET transistor devices, a plurality of fins, each of the fins having an upper surface, and an elevated isolation structure having an upper surface that is positioned at a level that is above a level of the upper surface of the fins. In this example, the product also includes a first gate structure having an axial length in a direction corresponding to the gate width direction of the transistor devices, wherein at least a portion of the axial length of the first gate structure is positioned above the upper surface of the elevated isolation structure.

公开(公告)号：US20190267371A1

公开(公告)日：2019-08-29

申请号：US15904555

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Bala Haran ,  Christopher Sheraw ,  Mahender Kumar

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L27/02

Abstract: One illustrative integrated circuit product disclosed herein includes a plurality of FinFET transistor devices, a plurality of fins, each of the fins having an upper surface, and an elevated isolation structure having an upper surface that is positioned at a level that is above a level of the upper surface of the fins. In this example, the product also includes a first gate structure having an axial length in a direction corresponding to the gate width direction of the transistor devices, wherein at least a portion of the axial length of the first gate structure is positioned above the upper surface of the elevated isolation structure.