公开(公告)号：US20170154816A1

公开(公告)日：2017-06-01

申请号：US14954112

申请日：2015-11-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sean X. LIN ,  Ming HE ,  Frank SMITH ,  Xunyuan ZHANG

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/76885 ,  H01L21/32051 ,  H01L21/32133 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76892 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53261

Abstract: A method of fabricating amorphous metal interconnections includes forming an amorphous metal layer over a base insulating layer on a semiconductor device using an amorphous metal having a non-crystalline structure. A portion of the amorphous metal layer is selectively removed to form a three dimensional pattern within a remaining portion of the amorphous metal layer. A fill insulating layer is disposed over the remaining portion of the amorphous metal layer and base insulating layer to fill the three dimensional pattern to form amorphous metal interconnects between semiconductor devices.