公开(公告)号：US20140353802A1

公开(公告)日：2014-12-04

申请号：US13903802

申请日：2013-05-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Nicholas Vincent LICAUSI ,  Errol Todd RYAN ,  Ming HE ,  Moosung M. CHAE ,  Kunaljeet TANWAR ,  Larry ZHAO ,  Christian WITT ,  Ailian ZHAO ,  Sean X. LIN ,  Xunyuan ZHANG

IPC: H01L21/314 ,  H01L21/32 ,  H01L21/308 ,  H01L29/06

CPC classification number: H01L21/314 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L29/06 ,  H01L2221/1047

Abstract: A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer in the ultra-low k film. In another aspect, a semiconductor device comprising a modified layer on a surface of an ultra-low k film is provided.

Abstract translation: 提供了一种在制造期间减少对超低k层的损伤的方法的方法。 一方面，一种方法包括：提供含有填充有孔填充材料的孔的固化的超低k膜; 以及改变超低k膜的暴露表面以在超低k膜中提供改性层。 在另一方面，提供一种在超低k膜的表面上包含改性层的半导体器件。

公开(公告)号：US20140353835A1

公开(公告)日：2014-12-04

申请号：US13903283

申请日：2013-05-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Moosung M. CHAE ,  Errol Todd RYAN ,  Nicholas Vincent LICAUSI ,  Christian WITT ,  Ailian ZHAO ,  Ming HE ,  Sean X. LIN ,  Xunyuan ZHANG ,  Kunaljeet TANWAR

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76831 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76843 ,  H01L2221/1047

Abstract: A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing material; removing exposed pore-stuffing material at the surface of the trench to form exposed pores; and forming a self-forming barrier layer on the surface of the trench.

Abstract translation: 提供了一种用于在半导体制造期间减少超低k层的自形成势垒的污染的方法的方法。 一方面，一种方法包括：提供包含至少一个沟槽的固化的超低k膜，并且用孔填充材料填充膜的孔; 在沟槽的表面去除暴露的孔隙填充材料以形成暴露的孔; 并在沟槽的表面上形成自形成阻挡层。

公开(公告)号：US20170154816A1

公开(公告)日：2017-06-01

申请号：US14954112

申请日：2015-11-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sean X. LIN ,  Ming HE ,  Frank SMITH ,  Xunyuan ZHANG

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/76885 ,  H01L21/32051 ,  H01L21/32133 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76892 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53261

Abstract: A method of fabricating amorphous metal interconnections includes forming an amorphous metal layer over a base insulating layer on a semiconductor device using an amorphous metal having a non-crystalline structure. A portion of the amorphous metal layer is selectively removed to form a three dimensional pattern within a remaining portion of the amorphous metal layer. A fill insulating layer is disposed over the remaining portion of the amorphous metal layer and base insulating layer to fill the three dimensional pattern to form amorphous metal interconnects between semiconductor devices.

公开(公告)号：US20150371899A1

公开(公告)日：2015-12-24

申请号：US14310314

申请日：2014-06-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xunyuan ZHANG ,  Sean X. LIN

IPC: H01L21/768 ,  H01L21/288

CPC classification number: H01L21/288 ,  C23C18/1834 ,  C23C18/40 ,  C23C18/405 ,  H01L21/76874 ,  H01L21/76877

Abstract: Circuit structure fabrication methods are provided which include: patterning at least one opening within a dielectric layer disposed over a substrate structure; providing a liner material within the at least one opening of the dielectric layer; disposing a surfactant over at least a portion of the liner material; and depositing, using an electroless process, a conductive material over the liner material to form a conductive structure, and the disposed surfactant inhibits formation of a void within the conductive structure.

Abstract translation: 提供了电路结构制造方法，其包括：图案化设置在衬底结构上的电介质层内的至少一个开口; 在介电层的至少一个开口内提供衬垫材料; 在衬垫材料的至少一部分上设置表面活性剂; 以及使用无电镀方法在所述衬里材料上沉积导电材料以形成导电结构，并且所述设置的表面活性剂抑制在所述导电结构内形成空隙。

公开(公告)号：US20140353805A1

公开(公告)日：2014-12-04

申请号：US13903618

申请日：2013-05-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Errol Todd RYAN ,  Moosung M. CHAE ,  Larry ZHAO ,  Kunaljeet TANWAR ,  Nicholas Vincent LICAUSI ,  Christian WITT ,  Ailian ZHAO ,  Ming HE ,  Sean X. LIN ,  Xunyuan ZHANG

IPC: H01L21/3105 ,  H01L23/00

CPC classification number: H01L21/02101 ,  H01L21/02063 ,  H01L21/76814

Abstract: A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can dissolve and remove the contaminants. In another aspect, an intermediate semiconductor device structure is provided that contains a dielectric layer with contaminant-containing pores and a supercritical fluid within the pores. In another aspect, a semiconductor device structure with a dielectric layer containing uncontaminated pores is provided.

Abstract translation: 提供了用于从半导体器件去除污染物的方法，例如从超低k膜的孔中除去污染物。 一方面，一种方法包括：向电介质层提供含有污染物的孔，并将介电层暴露于超临界流体。 超临界流体可以溶解和去除污染物。 在另一方面，提供了一种中间半导体器件结构，其包含具有含污染孔的电介质层和孔内的超临界流体。 另一方面，提供了具有含有未污染孔的电介质层的半导体器件结构。