公开(公告)号：US20150104948A1

公开(公告)日：2015-04-16

申请号：US14050472

申请日：2013-10-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. PATIL ,  Huy CAO ,  Hui ZHAN ,  Huang LIU

IPC: H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/31105 ,  H01L21/31116 ,  H01L21/31155 ,  H01L29/66795

Abstract: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of the film layer remaining unmodified beneath the upper portion; and subjecting the structure and film layer with the modified etch property to an etching process, the modified etch property of the film layer facilitating the etching process. Modifying the etch property of the upper portion of the film layer may include making the upper portion of the film layer preferentially susceptible or preferentially resistant to the etching process depending on the circuit fabrication approach being facilitated.

Abstract translation: 提供了便于制造电路结构的方法，其包括例如：提供具有膜层的结构; 通过将至少一种元素或分子注入到膜层的上部来改变膜层的蚀刻性质，膜层的蚀刻性质在上部保持不变; 并且对具有改进的蚀刻特性的结构和膜层进行蚀刻处理，使得蚀刻处理的膜层的改性蚀刻性能得以改善。 修改膜层上部的蚀刻性能可以包括使薄膜层的上部优先易于或优先地抵抗蚀刻工艺，这取决于促进的电路制造方法。