公开(公告)号：US09871050B1

公开(公告)日：2018-01-16

申请号：US15232906

申请日：2016-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Sven Beyer ,  Jan Paul

IPC: H01L29/788 ,  H01L27/11531 ,  H01L27/12 ,  H01L27/11526 ,  H01L29/423 ,  H01L27/11521

CPC classification number: H01L27/11531 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/1207 ,  H01L29/42328 ,  H01L29/42336

Abstract: A method of manufacturing a flash memory device is provided including providing a silicon-on-insulator (SOI) substrate, in particular, a fully depleted silicon-on-insulator (FDSOI) substrate, comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer and forming a memory device on the SOI substrate. Forming the flash memory device on the SOI substrate includes forming a flash transistor device and a read transistor device.

公开(公告)号：US10249633B2

公开(公告)日：2019-04-02

申请号：US15831833

申请日：2017-12-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Sven Beyer ,  Jan Paul

IPC: H01L27/12 ,  H01L29/423 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11531

Abstract: An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The SOI substrate includes a semiconductor bulk substrate, a buried insulating layer positioned above the semiconductor bulk substrate, and a semiconductor layer positioned above the buried insulating layer, and the flash memory device includes a flash transistor device and a read transistor device. The flash transistor device includes a floating gate, an insulating layer positioned above the floating gate, and a control gate positioned above the insulating layer, wherein the floating gate includes a portion of the semiconductor layer. The read transistor device includes a gate dielectric layer positioned above the semiconductor bulk substrate and a read gate electrode positioned above the gate dielectric layer.

公开(公告)号：US20180108668A1

公开(公告)日：2018-04-19

申请号：US15831833

申请日：2017-12-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ralf Richter ,  Sven Beyer ,  Jan Paul

IPC: H01L27/11531 ,  H01L27/11521 ,  H01L29/423 ,  H01L27/11526 ,  H01L27/12

CPC classification number: H01L27/11531 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/1207 ,  H01L29/42328 ,  H01L29/42336

Abstract: An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The SOI substrate includes a semiconductor bulk substrate, a buried insulating layer positioned above the semiconductor bulk substrate, and a semiconductor layer positioned above the buried insulating layer, and the flash memory device includes a flash transistor device and a read transistor device. The flash transistor device includes a floating gate, an insulating layer positioned above the floating gate, and a control gate positioned above the insulating layer, wherein the floating gate includes a portion of the semiconductor layer. The read transistor device includes a gate dielectric layer positioned above the semiconductor bulk substrate and a read gate electrode positioned above the gate dielectric layer.