Self-aligned double patterning via enclosure design
    1.
    发明授权
    Self-aligned double patterning via enclosure design 有权
    通过外壳设计进行自对准双图案化

    公开(公告)号:US08839168B2

    公开(公告)日:2014-09-16

    申请号:US13746508

    申请日:2013-01-22

    CPC classification number: G06F17/5081 G03F1/70 G06F17/5068

    Abstract: A design methodology for determining a via enclosure rule for use with a self-aligned double pattern (SADP) technique is disclosed. The shape of the block mask serves as a criterion for choosing a via enclosure rule. Different block mask shapes within an integrated circuit design may utilize different rules and provide different margins for via enclosure. A tight via enclosure design rule reduces the margin of a line beyond the via where possible, while a loose via enclosure design rule increases the margin of a line beyond the via where it is beneficial to do so.

    Abstract translation: 公开了一种用于确定与自对准双重图案(SADP)技术一起使用的通孔外壳规则的设计方法。 块掩模的形状作为选择通孔封套规则的标准。 集成电路设计中不同的块掩模形状可以利用不同的规则,并为通孔外壳提供不同的边缘。 紧密的通孔外壳设计规则可能会减少超出通孔的线的余量,而松动的通孔外壳设计规则可增加超出通孔的线的裕度,从而有利于此。

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