公开(公告)号：US09548312B1

公开(公告)日：2017-01-17

申请号：US14937041

申请日：2015-11-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sven Beyer ,  Alexander Ebermann ,  Martin Schulze

IPC: H01L21/4763 ,  H01L27/115 ,  H01L21/28

CPC classification number: H01L27/11524 ,  H01L21/28273 ,  H01L27/11536 ,  H01L27/11539

Abstract: A method includes providing a semiconductor structure including a nonvolatile memory cell element and one or more electrically insulating layers covering the nonvolatile memory cell element. The nonvolatile memory cell element includes a source region, a channel region, a drain region and a floating gate over at least a first portion of the channel region. A first opening is formed in the electrically insulating layers over the floating gate, a control gate insulation layer is deposited, and a second opening is formed in the electrically insulating layers over the drain region. The first opening and the second opening are filled with an electrically conductive material. The electrically conductive material in the first opening provides a control gate of the nonvolatile memory cell element and the electrically conductive material in the second opening provides an electrical contact to the drain region.

Abstract translation: 一种方法包括提供包括非易失性存储单元元件和覆盖非易失性存储单元元件的一个或多个电绝缘层的半导体结构。 非易失性存储单元元件包括在沟道区的至少第一部分上的源极区，沟道区，漏极区和浮置栅极。 在浮置栅极上的电绝缘层中形成第一开口，沉积控制栅极绝缘层，并且在漏极区域上的电绝缘层中形成第二开口。 第一开口和第二开口填充有导电材料。 第一开口中的导电材料提供非易失性存储单元元件的控制栅极，并且第二开口中的导电材料提供与漏极区域的电接触。