公开(公告)号：US20150021709A1

公开(公告)日：2015-01-22

申请号：US13945379

申请日：2013-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey P. JACOB ,  Murat Kerem AKARVARDAR ,  Michael John HARGROVE

IPC: H01L27/12 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L27/1211 ,  H01L21/76229 ,  H01L21/76281 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/1207 ,  H01L29/0649 ,  H01L29/7848

Abstract: Semiconductor structures and fabrication methods are provided integrating different fin device architectures on a common wafer, for instance, within a common functional device area of the wafer. The method includes: facilitating fabricating multiple fin device architectures within a common functional device wafer area by: providing a wafer with at least one fin disposed over a substrate, the fin including an isolation layer; modifying the fin(s) in a first region of the fin(s), while protecting the fin in a second region of the fin(s); and proceeding with forming one or more fin devices of a first architectural type in the first region and one or more fin devices of a second architectural type in the second region. The first architectural type and the second architectural type are different fin device architectures, such as different fin device isolation architectures, different fin type transistor architectures, or different fin-type devices or structures.

Abstract translation: 提供半导体结构和制造方法，其在公共晶片上集成了不同的鳍式器件结构，例如在晶片的公共功能器件区域内。 该方法包括：通过以下方式促进在公共功能器件晶片区域内制造多个鳍器件结构：提供具有设置在衬底上的至少一个鳍的晶片，所述鳍包括隔离层; 在翅片的第一区域中修改翅片，同时保护翅片的第二区域中的翅片; 并且继续在第一区域中形成第一建筑类型的一个或多个翅片装置和在第二区域中形成第二建筑类型的一个或多个翅片装置。 第一种架构类型和第二种结构类型是不同的鳍式器件架构，例如不同的鳍式器件隔离架构，不同鳍型晶体管架构，或不同鳍型器件或结构。