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1.发明申请SEMICONDUCTOR DEVICE WITH A MULTIPLE NANOWIRE CHANNEL STRUCTURE AND METHODS OF VARIABLY CONNECTING SUCH NANOWIRES FOR CURRENT DENSITY MODULATION 有权具有多个纳米通道结构的半导体器件和用于电流密度调制的这种纳米管的可变方法公开(公告)号：US20150187762A1
公开(公告)日：2015-07-02
申请号：US14146075
申请日：2014-01-02
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Jeremy Austin Wahl , Nicholas Vincent LiCausi
IPC: H01L27/088 , H01L29/06 , H01L21/02 , H01L21/8234 , H01L23/34 , H01L23/525 , H01L29/78
CPC classification number: H01L27/088 , H01L21/823412 , H01L23/345 , H01L29/0673 , H01L29/42364 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696 , H01L2924/0002 , H01L2924/00
Abstract: A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.
Abstract translation: 公开了纳米线器件，其包括第一和第二纳米线，围绕第一和第二纳米线的一部分定位的栅极结构以及围绕器件的源极/漏极区域中的第一纳米线的至少一部分的相变材料，但不包括 围绕源极/漏极区域中的第二纳米线。
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2.发明授权Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation 有权具有多纳米线通道结构的半导体器件和用于电流密度调制可变地连接这种纳米线的方法公开(公告)号：US09508712B2
公开(公告)日：2016-11-29
申请号：US14146075
申请日：2014-01-02
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Jeremy Austin Wahl , Nicholas Vincent LiCausi
IPC: H01L27/088 , H01L21/8234 , H01L23/34 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/06
CPC classification number: H01L27/088 , H01L21/823412 , H01L23/345 , H01L29/0673 , H01L29/42364 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696 , H01L2924/0002 , H01L2924/00
Abstract: A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.
Abstract translation: 公开了纳米线器件，其包括第一和第二纳米线，围绕第一和第二纳米线的一部分定位的栅极结构以及围绕器件的源极/漏极区域中的第一纳米线的至少一部分的相变材料，但不包括 围绕源极/漏极区域中的第二纳米线。
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