公开(公告)号：US10763328B2

公开(公告)日：2020-09-01

申请号：US16151938

申请日：2018-10-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Omur Isil Aydin ,  Judson Holt ,  Lakshmanan Vanamurthy ,  Tobias Heyne ,  Pei-Yu Chou ,  Cäcilia Brantz

IPC: H01L29/08 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02 ,  H01L21/265 ,  H01L29/167

Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.

公开(公告)号：US20200111870A1

公开(公告)日：2020-04-09

申请号：US16151938

申请日：2018-10-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Omur Isil Aydin ,  Judson Holt ,  Lakshmanan Vanamurthy ,  Tobias Heyne ,  Pei-Yu Chou ,  Cäcilia Brantz

IPC: H01L29/08 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.