公开(公告)号：US10763328B2

公开(公告)日：2020-09-01

申请号：US16151938

申请日：2018-10-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Omur Isil Aydin ,  Judson Holt ,  Lakshmanan Vanamurthy ,  Tobias Heyne ,  Pei-Yu Chou ,  Cäcilia Brantz

IPC: H01L29/08 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02 ,  H01L21/265 ,  H01L29/167

Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.

公开(公告)号：US09496341B1

公开(公告)日：2016-11-15

申请号：US14730320

申请日：2015-06-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Judson Holt ,  Shogo Mochizuki

IPC: H01L29/47 ,  H01L29/10 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/1054 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/18 ,  H01L21/7624 ,  H01L29/161 ,  H01L29/785

Abstract: A method includes forming a multilayered stack on a surface of a supporting layer. The multilayered stack is composed of alternating layers of compressively strained Silicon Germanium (Si1-xGex) and tensily strained Carbon-doped Silicon (Si:C). The method further includes etching the multilayered stack to form at least one Fin precursor structure and annealing the Fin precursor structure to remove Carbon from the strained Si:C layers to form Carbon-depleted layers and to diffuse Germanium from the Si1-xGex layers into the Carbon-depleted layers producing a Si1-xGex Fin. A structure that is disclosed includes a Semiconductor on Insulator (SOI) layer disposed on a layer of buried oxide and a multilayered stack on a surface of the SOI layer. The multilayered stack is composed of alternating layers of compressively strained Si1-xGex and tensily strained Si:C. The structure further includes a hardmask layer disposed on a top surface of the multilayered stack.

Abstract translation: 一种方法包括在支撑层的表面上形成多层叠层。 多层堆叠由压缩应变硅锗（Si1-xGex）和紧张应变碳掺杂硅（Si：C）的交替层组成。 该方法还包括蚀刻多层堆叠以形成至少一个Fin前体结构并退火Fin前体结构以从应变的Si：C层去除碳以形成贫碳层并将锗从Si1-xGex层扩散到 生产Si1-xGex Fin的碳耗尽层。 所公开的结构包括在SOI层的表面上设置在掩埋氧化物层和多层叠层上的半导体绝缘体（SOI）层。 多层堆叠由压缩应变Si1-xGex和紧张应变Si：C的交替层组成。 该结构还包括设置在多层堆叠的顶表面上的硬掩模层。

公开(公告)号：US20200111870A1

公开(公告)日：2020-04-09

申请号：US16151938

申请日：2018-10-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Omur Isil Aydin ,  Judson Holt ,  Lakshmanan Vanamurthy ,  Tobias Heyne ,  Pei-Yu Chou ,  Cäcilia Brantz

IPC: H01L29/08 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.