公开(公告)号：US09023709B2

公开(公告)日：2015-05-05

申请号：US14011413

申请日：2013-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hans-Peter Moll ,  Marco Lepper ,  Werner Graf

IPC: H01L21/00 ,  H01L21/3205 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76877

Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.

Abstract translation: 当形成先进的半导体器件的金属化层时，通常必须用金属（例如铜）填充具有高纵横比的孔。 本公开提供了一种用于在绝缘层中形成具有高纵横比的孔的方便的方法。 该绝缘层可能已经沉积在半导体器件的表面上。 所提出的方法依赖于在绝缘层上执行的离子注入步骤，随后进行蚀刻，其优选为湿蚀刻。

公开(公告)号：US20150064872A1

公开(公告)日：2015-03-05

申请号：US14011413

申请日：2013-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hans-Peter Moll ,  Marco Lepper ,  Werner Graf

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/288

CPC classification number: H01L21/76804 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76877

Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.

Abstract translation: 当形成先进的半导体器件的金属化层时，通常必须用金属（例如铜）填充具有高纵横比的孔。 本公开提供了一种用于在绝缘层中形成具有高纵横比的孔的方便的方法。 该绝缘层可能已经沉积在半导体器件的表面上。 所提出的方法依赖于在绝缘层上执行的离子注入步骤，随后进行蚀刻，其优选为湿蚀刻。