公开(公告)号：US09385030B2

公开(公告)日：2016-07-05

申请号：US14265536

申请日：2014-04-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yong M. Lee ,  Yue Hu ,  Wen-Pin Peng

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/768 ,  H01L21/283 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L21/76831 ,  H01L21/283 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/485 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to approaches for preventing contact encroachment in a semiconductor device. A first portion of a contact trench can be etched partway to a source-drain region of the semiconductor device. A dielectric liner can be deposited in this trench. A second etch can be performed on the lined trench to etch the contact trench channel the remainder of the way to the source-drain region. This leaves a portion of the dielectric liner remaining in the trench (e.g., covering the vertical walls of the trench) after the second etch.

Abstract translation: 本发明的方面涉及防止半导体器件中的接触侵蚀的方法。 接触沟槽的第一部分可以被蚀刻到半导体器件的源极 - 漏极区域的中途。 电介质衬垫可以沉积在该沟槽中。 可以在衬里的沟槽上执行第二蚀刻，以在接近沟槽沟道的其余部分到源极 - 漏极区域蚀刻接触沟槽沟道。 这在第二次蚀刻之后留下留在沟槽中的介电衬垫的一部分（例如，覆盖沟槽的垂直壁）。

公开(公告)号：US20150318204A1

公开(公告)日：2015-11-05

申请号：US14265536

申请日：2014-04-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yong M. Lee ,  Yue Hu ,  Wen-Pin Peng

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/417 ,  H01L21/283

CPC classification number: H01L21/76831 ,  H01L21/283 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/485 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to approaches for preventing contact encroachment in a semiconductor device. A first portion of a contact trench can be etched partway to a source-drain region of the semiconductor device. A dielectric liner can be deposited in this trench. A second etch can be performed on the lined trench to etch the contact trench channel the remainder of the way to the source-drain region. This leaves a portion of the dielectric liner remaining in the trench (e.g., covering the vertical walls of the trench) after the second etch.

Abstract translation: 本发明的方面涉及防止半导体器件中的接触侵蚀的方法。 接触沟槽的第一部分可以被蚀刻到半导体器件的源极 - 漏极区域的中途。 电介质衬垫可以沉积在该沟槽中。 可以在衬里的沟槽上执行第二蚀刻，以在接近沟槽沟道的其余部分到源极 - 漏极区域蚀刻接触沟槽沟道。 这在第二次蚀刻之后留下留在沟槽中的介质衬垫的一部分（例如，覆盖沟槽的垂直壁）。