公开(公告)号：US11316064B2

公开(公告)日：2022-04-26

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Mark D. Levy ,  Vibhor Jain ,  Andre Sturm

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/036 ,  H01L31/028 ,  H01L31/0312

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.