公开(公告)号：US20240363741A1

公开(公告)日：2024-10-31

申请号：US18767418

申请日：2024-07-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar SINGH

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an emitter in a semiconductor substrate; a collector in the semiconductor substrate; a base contact region in the semiconductor substrate and adjacent to the collector and the emitter; and a shallow trench isolation structure overlapping the base contact region and separating the base contact region from the emitter and the collector.

公开(公告)号：US20240030320A1

公开(公告)日：2024-01-25

申请号：US17872790

申请日：2022-07-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar SINGH

IPC: H01L29/735 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/735 ,  H01L29/1008 ,  H01L29/0808 ,  H01L29/0821

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an emitter in a semiconductor substrate; a collector in the semiconductor substrate; a base contact region in the semiconductor substrate and adjacent to the collector and the emitter; and a shallow trench isolation structure overlapping the base contact region and separating the base contact region from the emitter and the collector.

公开(公告)号：US20210134987A1

公开(公告)日：2021-05-06

申请号：US16674432

申请日：2019-11-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mankyu YANG ,  Jagar SINGH ,  Alexander MARTIN ,  John J. ELLIS-MONAGHAN

IPC: H01L29/735 ,  H01L29/417 ,  H01L29/06 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate controlled transistors and methods of manufacture. The structure includes: an emitter region; a collector region; base regions on opposing sides of the emitter region and the collector region; and a gate structure composed of a body region and leg regions, the body region being located between the base regions on opposing sides of the emitter region and the collector region, and the leg regions isolating the base regions from both the emitter region and the collector region.

公开(公告)号：US20230317815A1

公开(公告)日：2023-10-05

申请号：US17708698

申请日：2022-03-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar SINGH

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/4983 ,  H01L29/7816 ,  H01L29/0653 ,  H01L29/4966 ,  H01L29/401 ,  H01L29/66681

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a laterally diffused metal-oxide semiconductor with one or more gate contacts and methods of manufacture. The structure includes: sidewall spacers over a semiconductor substrate; and a gate structure within a space defined by the sidewall spacers. The gate structure includes: a plurality of gate materials over the semiconductor substrate and between the sidewall spacers; and a gate electrode over the plurality of gate materials and contacting the sidewall spacers.