公开(公告)号：US11502106B2

公开(公告)日：2022-11-15

申请号：US16788276

申请日：2020-02-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Benjamin Vito Fasano ,  Koushik Ramachandran ,  Ian Douglas Walter Melville ,  Sarah Huffsmith Knickerbocker ,  Jorge Lubguban

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L21/762 ,  H01L29/161

Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.

公开(公告)号：US20240393523A1

公开(公告)日：2024-11-28

申请号：US18202337

申请日：2023-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brittany Hedrick ,  Ian Melville ,  Michael David Webster ,  Harry Cox ,  Jorge Lubguban ,  Sarah Knickerbocker

IPC: F21V8/00 ,  G02B6/122

Abstract: Structures for a photonics chip that include a cavity or groove and methods of forming same. The structure comprises a semiconductor substrate including a first opening, a back-end-of-line stack on the semiconductor substrate, and a dielectric layer on the back-end-of-line stack. The back-end-of-line stack includes a pad, and the dielectric layer includes a second opening that extends to the pad. The structure further comprises an electrical interconnect inside the second opening in the dielectric layer. The electrical interconnect includes a sidewall that is separated in a lateral direction from the dielectric layer by a gap.