公开(公告)号：US20230228940A1

公开(公告)日：2023-07-20

申请号：US17577162

申请日：2022-01-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ian Melville ,  Nicholas Polomoff ,  Thomas Houghton ,  Koushik Ramachandran ,  Pallabi Das

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/1228 ,  G02B6/13 ,  G02B2006/12061

Abstract: Structures for a cavity included in a photonics chip and methods of fabricating a structure for a cavity included in a photonics chip. The structure includes a substrate, a back-end-of-line stack having interlayer dielectric layers on the substrate, and a cavity penetrating through the back-end-of-line stack and into the substrate. The cavity includes first sidewalls and second sidewalls, and the second sidewalls have an alternating arrangement with the first sidewalls to define non-right-angle corners.

公开(公告)号：US20240393523A1

公开(公告)日：2024-11-28

申请号：US18202337

申请日：2023-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brittany Hedrick ,  Ian Melville ,  Michael David Webster ,  Harry Cox ,  Jorge Lubguban ,  Sarah Knickerbocker

IPC: F21V8/00 ,  G02B6/122

Abstract: Structures for a photonics chip that include a cavity or groove and methods of forming same. The structure comprises a semiconductor substrate including a first opening, a back-end-of-line stack on the semiconductor substrate, and a dielectric layer on the back-end-of-line stack. The back-end-of-line stack includes a pad, and the dielectric layer includes a second opening that extends to the pad. The structure further comprises an electrical interconnect inside the second opening in the dielectric layer. The electrical interconnect includes a sidewall that is separated in a lateral direction from the dielectric layer by a gap.

公开(公告)号：US11828983B2

公开(公告)日：2023-11-28

申请号：US17577162

申请日：2022-01-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ian Melville ,  Nicholas Polomoff ,  Thomas Houghton ,  Koushik Ramachandran ,  Pallabi Das

IPC: G02B6/12 ,  G02B6/10 ,  G02B6/122 ,  G02B6/13

CPC classification number: G02B6/1228 ,  G02B6/13 ,  G02B2006/12061

Abstract: Structures for a cavity included in a photonics chip and methods of fabricating a structure for a cavity included in a photonics chip. The structure includes a substrate, a back-end-of-line stack having interlayer dielectric layers on the substrate, and a cavity penetrating through the back-end-of-line stack and into the substrate. The cavity includes first sidewalls and second sidewalls, and the second sidewalls have an alternating arrangement with the first sidewalls to define non-right-angle corners.