公开(公告)号：US20210098591A1

公开(公告)日：2021-04-01

申请号：US16585671

申请日：2019-09-27

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Julien FROUGIER ,  Ali RAZAVIEH ,  Haiting WANG

IPC: H01L29/49 ,  H01L21/306 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to air spacer structures and methods of manufacture. The structure includes: a plurality of gate structures comprising active regions; contacts extending to the active regions; a plurality of anchor structures between the active regions; and air spacer structures adjacent to the contacts.