公开(公告)号：US20230215917A1

公开(公告)日：2023-07-06

申请号：US17569897

申请日：2022-01-06

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ali RAZAVIEH ,  Haiting WANG

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/7827 ,  H01L29/78642 ,  H01L29/66666

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with a vertical nanowire channel region and methods of manufacture. The structure includes: a bottom source/drain region; a top source/drain region; a gate structure extending between the bottom source/drain region and the top source/drain region; and a vertical nanowire in a channel region of the gate structure.

公开(公告)号：US20250022915A1

公开(公告)日：2025-01-16

申请号：US18899522

申请日：2024-09-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ali RAZAVIEH ,  Haiting WANG

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with a vertical nanowire channel region and methods of manufacture. The structure includes: a bottom source/drain region; a top source/drain region; a gate structure extending between the bottom source/drain region and the top source/drain region; and a vertical nanowire in a channel region of the gate structure.

公开(公告)号：US20210098591A1

公开(公告)日：2021-04-01

申请号：US16585671

申请日：2019-09-27

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Julien FROUGIER ,  Ali RAZAVIEH ,  Haiting WANG

IPC: H01L29/49 ,  H01L21/306 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to air spacer structures and methods of manufacture. The structure includes: a plurality of gate structures comprising active regions; contacts extending to the active regions; a plurality of anchor structures between the active regions; and air spacer structures adjacent to the contacts.