公开(公告)号：US20220173211A1

公开(公告)日：2022-06-02

申请号：US17108543

申请日：2020-12-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett T. CUCCI ,  Siva P. ADUSUMILLI ,  Johnatan A. KANTAROVSKY ,  Claire E. KARDOS ,  Sen LIU

IPC: H01L29/06 ,  H01L21/764 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgap isolation structures and methods of manufacture. The structure includes: a bulk substrate material; a first airgap isolation structure in the bulk substrate material and having a first aspect ratio; and a second airgap isolation structure in the bulk substrate material and having a second aspect ratio different from the first aspect ratio.

公开(公告)号：US20220115262A1

公开(公告)日：2022-04-14

申请号：US17069098

申请日：2020-10-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uzma RANA ,  Anthony K. STAMPER ,  Steven M. SHANK ,  Brett T. CUCCI

IPC: H01L21/76 ,  H01L21/26

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.

公开(公告)号：US20240234346A1

公开(公告)日：2024-07-11

申请号：US18095156

申请日：2023-01-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark D. LEVY ,  Brett T. CUCCI ,  Spencer H. PORTER ,  Santosh SHARMA

IPC: H01L23/58 ,  H01L23/31 ,  H01L23/532 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/585 ,  H01L23/3178 ,  H01L23/53295 ,  H01L29/0657 ,  H01L29/66462 ,  H01L29/7786 ,  H01L23/291

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures and methods of manufacture. The structure includes: a semiconductor substrate; a channel layer above the semiconductor substrate; a trench within the channel layer, extending to the semiconductor substrate; and a moisture barrier layer lining sidewalls and a bottom surface of the trench.

公开(公告)号：US20220208599A1

公开(公告)日：2022-06-30

申请号：US17696348

申请日：2022-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uzma RANA ,  Anthony K. STAMPER ,  Steven M. SHANK ,  Brett T. CUCCI

IPC: H01L21/76 ,  H01L27/06 ,  H01L21/762 ,  H01L21/26

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.