公开(公告)号：US20250089317A1

公开(公告)日：2025-03-13

申请号：US18463889

申请日：2023-09-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong YU ,  William J. TAYLOR, JR.

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures with a bottom epitaxial semiconductor material and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets; a plurality of gate structures surrounding individual semiconductor nanosheets of the plurality of semiconductor nanosheets; a first semiconductor material of a first conductivity type at source/drain regions of the plurality of gate structures; and a second semiconductor material of a second conductivity type above the first semiconductor material, the first conductivity type being different than the second conductivity type.

公开(公告)号：US20220254773A1

公开(公告)日：2022-08-11

申请号：US17170325

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhiqing LI ,  William J. TAYLOR, JR. ,  Anindya NATH

IPC: H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge devices and methods of manufacture. The structure includes: a plurality of regions of a first dopant type; insulator material separating each region of the plurality of regions of the first dopant type; and a substrate contacting the plurality of regions of the first dopant type, the substrate comprising a base region of a second dopant type different than the first dopant type and an outer segment surrounding the plurality of regions of the first dopant type, the outer segment comprises an electrical resistivity higher than the second dopant type.