公开(公告)号：US20220216198A1

公开(公告)日：2022-07-07

申请号：US17704422

申请日：2022-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Souvick MITRA ,  Robert J. GAUTHIER, JR. ,  Alain F. LOISEAU ,  You LI ,  Tsung-Che TSAI

IPC: H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.

公开(公告)号：US20220059523A1

公开(公告)日：2022-02-24

申请号：US17001009

申请日：2020-08-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Robert J. GAUTHIER, JR. ,  Meng MIAO

IPC: H01L27/02 ,  H01L29/73

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge (ESD) device and methods of manufacture. The structure (ESD device) includes: a trigger collector region having fin structures of a first dopant type, a collector region having fin structures in a well of a second dopant type and further including a lateral ballasting resistance; an emitter region having a well of the second dopant type and fin structures of the first dopant type; and a base region having a well and fin structures of the second dopant type.

公开(公告)号：US20220021205A1

公开(公告)日：2022-01-20

申请号：US17490371

申请日：2021-09-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Mickey YU ,  Robert J. GAUTHIER, JR.

IPC: H02H9/04 ,  H01L27/02 ,  H02H1/00 ,  H01L23/60

Abstract: A circuit structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.

公开(公告)号：US20230420447A1

公开(公告)日：2023-12-28

申请号：US18462779

申请日：2023-09-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Robert J. GAUTHIER, JR. ,  Meng MIAO ,  Alain F. LOISEAU ,  Souvick MITRA ,  You LI ,  Wei LIANG

IPC: H01L27/02 ,  H01L21/84 ,  H01L21/8222 ,  H01L27/12

CPC classification number: H01L27/0259 ,  H01L27/0288 ,  H01L27/1207 ,  H01L21/8222 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.

公开(公告)号：US20220271028A1

公开(公告)日：2022-08-25

申请号：US17185243

申请日：2021-02-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Robert J. GAUTHIER, JR. ,  Meng MIAO ,  Alain F. LOISEAU ,  Souvick MITRA ,  You LI ,  Wei LIANG

IPC: H01L27/02 ,  H01L27/12 ,  H01L21/8222 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.

公开(公告)号：US20220246749A1

公开(公告)日：2022-08-04

申请号：US17164855

申请日：2021-02-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Meng MIAO ,  Alain François LOISEAU ,  Souvick MITRA ,  Robert John GAUTHIER JR. ,  You LI ,  Wei LIANG

IPC: H01L29/74 ,  H01L29/06 ,  H01L29/66

Abstract: An ESD protection device may be provided, including: a substrate including a first conductivity region and a second conductivity region arranged therein. The first conductivity region may include a first terminal region and a second terminal region electrically coupled with each other. The second conductivity region may include a third terminal region and a fourth terminal region electrically coupled with each other. The second conductivity region may further include a fifth terminal region electrically coupled with the first and second terminal regions. The fifth terminal region may be arranged laterally between the third terminal region and the fourth terminal region. The first conductivity region, the first terminal region, the third terminal region, and the fifth terminal region may have a first conductivity type. The second conductivity region, the second terminal region, and the fourth terminal region may have a second conductivity type different from the first conductivity type.

公开(公告)号：US20210104512A1

公开(公告)日：2021-04-08

申请号：US16592013

申请日：2019-10-03

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Souvick MITRA ,  Alain F. LOISEAU ,  Robert J. GAUTHIER, JR. ,  You LI ,  Tsung-Che TSAI

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/747 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bi-directional silicon controlled rectifiers (SCRs) and methods of manufacture. The structure includes: a plurality of diffusion regions; a plurality of p-type (P+) wells adjacent to the diffusion regions, wherein the P+ wells are directly connected; and a plurality of n-type (N+) wells adjacent to the P+ wells.