公开(公告)号：US20220216198A1

公开(公告)日：2022-07-07

申请号：US17704422

申请日：2022-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Souvick MITRA ,  Robert J. GAUTHIER, JR. ,  Alain F. LOISEAU ,  You LI ,  Tsung-Che TSAI

IPC: H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.

公开(公告)号：US20220059523A1

公开(公告)日：2022-02-24

申请号：US17001009

申请日：2020-08-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Robert J. GAUTHIER, JR. ,  Meng MIAO

IPC: H01L27/02 ,  H01L29/73

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge (ESD) device and methods of manufacture. The structure (ESD device) includes: a trigger collector region having fin structures of a first dopant type, a collector region having fin structures in a well of a second dopant type and further including a lateral ballasting resistance; an emitter region having a well of the second dopant type and fin structures of the first dopant type; and a base region having a well and fin structures of the second dopant type.

公开(公告)号：US20230411384A1

公开(公告)日：2023-12-21

申请号：US17842266

申请日：2022-06-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anindya NATH ,  Robert J. GAUTHIER, JR. ,  Rajendran KRISHNASAMY

IPC: H01L27/02 ,  H01L49/02

CPC classification number: H01L27/0288 ,  H01L27/0259 ,  H01L28/20

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge device (ESD) with a pinch resistor and methods of manufacture. The structure includes: a semiconductor substrate; a shallow trench isolation structure extending into the semiconductor substrate; an amorphous layer in the semiconductor substrate and below the shallow trench isolation structure; and a pinch resistor between the shallow trench isolation structure and the amorphous layer.

公开(公告)号：US20230420447A1

公开(公告)日：2023-12-28

申请号：US18462779

申请日：2023-09-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Robert J. GAUTHIER, JR. ,  Meng MIAO ,  Alain F. LOISEAU ,  Souvick MITRA ,  You LI ,  Wei LIANG

IPC: H01L27/02 ,  H01L21/84 ,  H01L21/8222 ,  H01L27/12

CPC classification number: H01L27/0259 ,  H01L27/0288 ,  H01L27/1207 ,  H01L21/8222 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.

公开(公告)号：US20220271028A1

公开(公告)日：2022-08-25

申请号：US17185243

申请日：2021-02-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Robert J. GAUTHIER, JR. ,  Meng MIAO ,  Alain F. LOISEAU ,  Souvick MITRA ,  You LI ,  Wei LIANG

IPC: H01L27/02 ,  H01L27/12 ,  H01L21/8222 ,  H01L21/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.

公开(公告)号：US20210104512A1

公开(公告)日：2021-04-08

申请号：US16592013

申请日：2019-10-03

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Souvick MITRA ,  Alain F. LOISEAU ,  Robert J. GAUTHIER, JR. ,  You LI ,  Tsung-Che TSAI

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/747 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bi-directional silicon controlled rectifiers (SCRs) and methods of manufacture. The structure includes: a plurality of diffusion regions; a plurality of p-type (P+) wells adjacent to the diffusion regions, wherein the P+ wells are directly connected; and a plurality of n-type (N+) wells adjacent to the P+ wells.

公开(公告)号：US20220021205A1

公开(公告)日：2022-01-20

申请号：US17490371

申请日：2021-09-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Mickey YU ,  Robert J. GAUTHIER, JR.

IPC: H02H9/04 ,  H01L27/02 ,  H02H1/00 ,  H01L23/60

Abstract: A circuit structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.