公开(公告)号：US20170037467A1

公开(公告)日：2017-02-09

申请号：US14818977

申请日：2015-08-05

Applicant: Genia Technologies, Inc.

Inventor： John Foster ,  Jason Komadina

IPC: C12Q1/68 ,  G01N27/447 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34

CPC classification number: C12Q1/6874 ,  C12Q1/6869 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/345 ,  G01N27/44791 ,  G01N33/48721 ,  C12Q2527/125 ,  C12Q2565/631

Abstract: A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.

Abstract translation: 纳米孔单元包括导电层。 纳米孔单元还包括设置在导电层上方的氮化钛（TiN）工作电极。 纳米孔单元还包括设置在TiN工作电极上方的绝缘壁，其中绝缘壁和TiN工作电极形成可包含电解质的阱。 在一些实施例中，TiN工作电极包括通过沉积技术沉积的海绵状和多孔的TiN工作电极，该沉积技术具有被调整以在导电层上方沉积稀疏间隔的TiN柱状结构或TiN晶体柱的条件。

公开(公告)号：US20190161795A1

公开(公告)日：2019-05-30

申请号：US16201069

申请日：2018-11-27

Applicant: Genia Technologies, Inc.

Inventor： John Foster ,  Jason Komadina

IPC: C12Q1/6874 ,  G01N27/447 ,  C23C14/34 ,  C23C14/06 ,  G01N33/487 ,  C12Q1/6869 ,  C23C14/00

Abstract: A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.

公开(公告)号：US10174371B2

公开(公告)日：2019-01-08

申请号：US14818977

申请日：2015-08-05

Applicant: Genia Technologies, Inc.

Inventor： John Foster ,  Jason Komadina

IPC: C12Q1/6874 ,  C12Q1/6869 ,  G01N33/487 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  G01N27/447

Abstract: A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.