Abstract:
An EUV light generator including the following components: A. an electron storage ring including a first linear section and a second linear section; B. an electron supplier configured to supply the electron storage ring with an electron bunch; C. a high-frequency acceleration cavity disposed in the first linear section and configured to accelerate the electron bunch in such a way that a length Lez of the electron bunch satisfies “0.09 m≤Lez≤3 m;” and D. an undulator disposed in the second linear section and configured to output EUV light when the electron bunch enters the undulator.
Abstract:
An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.
Abstract:
A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.