公开(公告)号：US20240347528A1

公开(公告)日：2024-10-17

申请号：US18300161

申请日：2023-04-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anindya NATH ,  Rajendran KRISHNASAMY ,  Souvick MITRA ,  Steven M. SHANK ,  Sagar P. KARALKAR

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to silicon control rectifiers and methods of manufacture. A structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and at least one gate structure in the first well which abuts one shallow trench isolation structure of the plurality of shallow trench isolation structures.