公开(公告)号：US20240130255A1

公开(公告)日：2024-04-18

申请号：US18046170

申请日：2022-10-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Robert Viktor Seidel ,  Suk Hee Jang ,  Anastasia Voronova ,  Young Seon You

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/16

Abstract: The disclosure provides a structure and method for a memory element to confine a metal (e.g., a remaining portion of a metallic residue) with a spacer. A structure according to the disclosure includes a memory element over a first portion of an insulator layer. A portion of the memory element includes a sidewall over the insulator layer. A spacer is adjacent the sidewall of the memory element and on the first portion of the insulator layer. A metal-dielectric layer is within an interface between the spacer and the sidewall or an interface between the spacer and the first portion of the insulator layer. The insulator layer includes a second portion adjacent the first portion, and the second portion does not include the memory element, the spacer, and the metal-dielectric layer thereon.