公开(公告)号：US20230261062A1

公开(公告)日：2023-08-17

申请号：US17671879

申请日：2022-02-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili Raghunathan ,  Vibhor Jain ,  Sebastian Ventrone ,  Johnatan Kantarovsky ,  Yves Ngu

IPC: H01L29/40 ,  H01L29/735 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/407 ,  H01L29/735 ,  H01L29/0646 ,  H01L29/423 ,  H01L29/401

Abstract: Structures with an isolation region and fabrication methods for a structure having an isolation region. The structure includes a semiconductor substrate, a first isolation region surrounding a portion of the semiconductor substrate, a device in the portion of the semiconductor substrate, and a second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.

公开(公告)号：US12159910B2

公开(公告)日：2024-12-03

申请号：US17671879

申请日：2022-02-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili Raghunathan ,  Vibhor Jain ,  Sebastian Ventrone ,  Johnatan Kantarovsky ,  Yves Ngu

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L29/735

Abstract: Structures with an isolation region and fabrication methods for a structure having an isolation region. The structure includes a semiconductor substrate, a first isolation region surrounding a portion of the semiconductor substrate, a device in the portion of the semiconductor substrate, and a second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.