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公开(公告)号:US20210391691A1
公开(公告)日:2021-12-16
申请号:US17287149
申请日:2019-10-23
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takahiro SUGIYAMA , Akiyoshi WATANABE , Hiroki MIYACHI , Ryoichi KASHIRO , Takeshi KANZAKI
Abstract: One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.
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公开(公告)号:US20190319428A1
公开(公告)日:2019-10-17
申请号:US16377321
申请日:2019-04-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Takeshi KANZAKI , Hiroki MIYACHI , Ryoichi KASHIRO
Abstract: The present semiconductor light emitting element is a semiconductor light emitting element including an active layer, an upper cladding layer and a lower cladding layer that sandwich the active layer, and a phase modulation layer optically coupled to the active layer, in which the phase modulation layer includes a basic layer and a plurality of different refractive index regions that are different in refractive index from the basic layer, and the plurality of different refractive index regions are disposed so as to form a pattern in a region outside a light line on a reciprocal lattice space in the phase modulation layer.
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