SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

    公开(公告)号:US20190288483A1

    公开(公告)日:2019-09-19

    申请号:US16433127

    申请日:2019-06-06

    Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

    THREE-DIMENSIONAL MEASUREMENT DEVICE

    公开(公告)号:US20210262787A1

    公开(公告)日:2021-08-26

    申请号:US17175059

    申请日:2021-02-12

    Abstract: A three-dimensional measurement device includes one or a plurality of light source units configured to irradiate the object to be measured SA with measurement light having a predetermined pattern, one or a plurality of image capture units configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured on the basis of results of image capture performed by the image capture units. The light source units are constituted by an S-iPMSEL of M-point oscillation.

    LIGHT EMISSION DEVICE
    5.
    发明申请

    公开(公告)号:US20210249842A1

    公开(公告)日:2021-08-12

    申请号:US16972825

    申请日:2019-06-04

    Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

    LIGHT-EMITTING DEVICE AND PRODUCTION METHOD FOR SAME

    公开(公告)号:US20200373740A1

    公开(公告)日:2020-11-26

    申请号:US16769828

    申请日:2018-11-28

    Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    7.
    发明申请

    公开(公告)号:US20200287350A1

    公开(公告)日:2020-09-10

    申请号:US16756513

    申请日:2018-10-02

    Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

    LIGHT EMISSION DEVICE
    10.
    发明申请

    公开(公告)号:US20210226412A1

    公开(公告)日:2021-07-22

    申请号:US17269313

    申请日:2019-08-27

    Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer. A magnitude of at least one of in-plane wavenumber vectors in four directions formed in the reciprocal lattice space and each including a wavenumber spread corresponding to an angle spread of the output light is smaller than 2π/λ.

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