公开(公告)号：US20190288483A1

公开(公告)日：2019-09-19

申请号：US16433127

申请日：2019-06-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/026 ,  H01S5/042

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

公开(公告)号：US20180109075A1

公开(公告)日：2018-04-19

申请号：US15556429

申请日：2016-03-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/42

CPC classification number: H01S5/18358 ,  H01S5/0683 ,  H01S5/105 ,  H01S5/187 ,  H01S5/42 ,  H01S5/423 ,  H01S2301/18 ,  H01S2301/20

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0

公开(公告)号：US20180074227A1

公开(公告)日：2018-03-15

申请号：US15701918

申请日：2017-09-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshiro NOMOTO ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Soh UENOYAMA

IPC: G02B1/00 ,  G02B5/00 ,  G02F1/19

CPC classification number: G02B1/002 ,  G02B5/008 ,  G02F1/19 ,  G02F2202/101 ,  G02F2202/30

Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 μm. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.

公开(公告)号：US20210262787A1

公开(公告)日：2021-08-26

申请号：US17175059

申请日：2021-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Hiroki KAMEI ,  Takahiro SUGIYAMA ,  Akiyoshi WATANABE

IPC: G01B11/25 ,  G06K9/20 ,  G06T7/521

Abstract: A three-dimensional measurement device includes one or a plurality of light source units configured to irradiate the object to be measured SA with measurement light having a predetermined pattern, one or a plurality of image capture units configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured on the basis of results of image capture performed by the image capture units. The light source units are constituted by an S-iPMSEL of M-point oscillation.

公开(公告)号：US20210249842A1

公开(公告)日：2021-08-12

申请号：US16972825

申请日：2019-06-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/185 ,  H01S5/183 ,  H01S5/00 ,  H01S5/042 ,  H01S5/343

Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

公开(公告)号：US20200373740A1

公开(公告)日：2020-11-26

申请号：US16769828

申请日：2018-11-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/062 ,  H01S5/183

Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.

公开(公告)号：US20200287350A1

公开(公告)日：2020-09-10

申请号：US16756513

申请日：2018-10-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA

IPC: H01S5/18 ,  H01S5/10 ,  H01S3/00

Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

公开(公告)号：US20180026419A1

公开(公告)日：2018-01-25

申请号：US15656096

申请日：2017-07-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/187

CPC classification number: H01S5/0085 ,  H01S5/0265 ,  H01S5/183 ,  H01S5/18338 ,  H01S5/18363 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/187

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

公开(公告)号：US20180006426A1

公开(公告)日：2018-01-04

申请号：US15541515

申请日：2016-01-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu TAKIGUCHI ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Takahiro SUGIYAMA ,  Yoshitaka KUROSAKA

IPC: H01S5/02 ,  G02B27/10 ,  G02F1/1335 ,  H01S5/18

CPC classification number: H01S5/02 ,  G02B27/1026 ,  G02B27/22 ,  G02B27/26 ,  G02F1/133504 ,  G02F1/133553 ,  G02F2001/133638 ,  H01S3/1065 ,  H01S5/02236 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/105 ,  H01S5/14 ,  H01S5/18 ,  H01S5/18302 ,  H01S5/18361 ,  H01S5/34313 ,  H01S5/4093 ,  H01S5/423 ,  H01S2301/20

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

公开(公告)号：US20210226412A1

公开(公告)日：2021-07-22

申请号：US17269313

申请日：2019-08-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA ,  Yoshitaka KUROSAKA

IPC: H01S5/026 ,  H01S5/183

Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer. A magnitude of at least one of in-plane wavenumber vectors in four directions formed in the reciprocal lattice space and each including a wavenumber spread corresponding to an angle spread of the output light is smaller than 2π/λ.