公开(公告)号：US20190271734A1

公开(公告)日：2019-09-05

申请号：US16346594

申请日：2017-09-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru MATSUMOTO ,  Akira SHIMASE

IPC: G01R31/265

Abstract: A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.

公开(公告)号：US20190257798A1

公开(公告)日：2019-08-22

申请号：US16346585

申请日：2017-09-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru MATSUMOTO

IPC: G01N29/265 ,  G01N29/28 ,  G01R31/26 ,  G01R31/317 ,  G06T7/00

Abstract: Provided is an ultrasonic inspection device for inspecting a packaged semiconductor device, The ultrasonic inspection device including an ultrasonic transducer that is disposed to face the semiconductor device; a medium holding unit that is provided at an end of the ultrasonic transducer facing the semiconductor device and holds a medium through which ultrasonic waves are propagated; a stage that moves the position of the semiconductor device relative to the ultrasonic transducer; and an analysis unit that analyzes the reaction of the semiconductor device in accordance with input of the ultrasonic waves from the ultrasonic transducer.

公开(公告)号：US20220163485A1

公开(公告)日：2022-05-26

申请号：US17430904

申请日：2020-01-28

Applicant: National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY ,  HAMAMATSU PHOTONICS K.K.

Inventor： Naohiro HOZUMI ,  Takuto MATSUI ,  Toru MATSUMOTO ,  Shigeru EURA

IPC: G01N29/04 ,  G01N29/44 ,  G01N29/26

Abstract: An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.

公开(公告)号：US20200057032A1

公开(公告)日：2020-02-20

申请号：US16346919

申请日：2017-09-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru MATSUMOTO

IPC: G01N29/265 ,  G01N29/44 ,  G01N29/28 ,  G01R31/26 ,  G01R31/28

Abstract: This ultrasonic inspection device, for inspecting a packaged semiconductor device, is provided with: an ultrasonic transducer which outputs ultrasonic waves to a semiconductor device; a receiver (a reflection detection unit) which detects reflected waves of the ultrasonic waves reflected on the semiconductor device; a stage which moves the positions of the semiconductor device relative to the ultrasonic transducer; a stage control unit which controls driving of the stage; and an analysis unit which analyzes the reaction of the semiconductor device to the input of the ultrasonic waves from the ultrasonic transducer. The stage control unit controls the distance between the semiconductor device and the ultrasonic transducer on the basis of a peak occurring in time waveform of the reflected wave detected by the receiver.