公开(公告)号：US10074695B2

公开(公告)日：2018-09-11

申请号：US15500084

申请日：2014-12-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Jianhua Yang ,  Stanley Williams ,  Max Zhang ,  Zhiyong Li

IPC: H01L47/00 ,  H01L27/26

CPC classification number: H01L27/26 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L47/005

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.