公开(公告)号：US20170279042A1

公开(公告)日：2017-09-28

申请号：US15507014

申请日：2014-08-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Minxian ZHANG

IPC: H01L45/00

CPC classification number: H01L45/08 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/145 ,  H01L45/146

Abstract: A fast erasing memristor includes an active region, a resistive heater, and a dielectric sheath. The active region has a switching layer coupled between a first conducting layer and second conducting layer. The resistive heater is coupled to the active region to provide heat to the active region. The dielectric sheath separates the active region and the resistive heater.

公开(公告)号：US20170279044A1

公开(公告)日：2017-09-28

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI ,  Minxian ZHANG ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

CPC classification number: H01L45/1233 ,  B41J2/1753 ,  B41J2/17546 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.