公开(公告)号：US10026894B2

公开(公告)日：2018-07-17

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Jianhua Yang ,  Zhiyong Li ,  Minxian Zhang ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.

公开(公告)号：US20170279044A1

公开(公告)日：2017-09-28

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI ,  Minxian ZHANG ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

CPC classification number: H01L45/1233 ,  B41J2/1753 ,  B41J2/17546 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.