公开(公告)号：US20210111002A1

公开(公告)日：2021-04-15

申请号：US16463531

申请日：2018-05-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuki KONDO ,  Kenetsu YOKOGAWA ,  Masahito MORI ,  Satoshi UNE ,  Kazunori NAKAMOTO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.