公开(公告)号：US20210111002A1

公开(公告)日：2021-04-15

申请号：US16463531

申请日：2018-05-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuki KONDO ,  Kenetsu YOKOGAWA ,  Masahito MORI ,  Satoshi UNE ,  Kazunori NAKAMOTO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.

公开(公告)号：US20210233744A1

公开(公告)日：2021-07-29

申请号：US16646696

申请日：2019-02-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Takamasa ICHINO ,  Kohei SATO ,  Kazunori NAKAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

公开(公告)号：US20200083026A1

公开(公告)日：2020-03-12

申请号：US16561785

申请日：2019-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Takamasa ICHINO ,  Kohei SATO ,  Kazunori NAKAMOTO ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.

公开(公告)号：US20190267219A1

公开(公告)日：2019-08-29

申请号：US16111752

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi UEMURA ,  Takamasa ICHINO ,  Kazunori NAKAMOTO ,  Kohei SATO

IPC: H01J37/32

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

公开(公告)号：US20150083329A1

公开(公告)日：2015-03-26

申请号：US14557838

申请日：2014-12-02

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kohei SATO ,  Kazunori NAKAMOTO ,  Yutaka OMOTO

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/6833

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract translation: 在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及 多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

公开(公告)号：US20140216657A1

公开(公告)日：2014-08-07

申请号：US13798270

申请日：2013-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hironori KUSUMOTO ,  Yutaka OHMOTO ,  Kazunori NAKAMOTO ,  Koji NAGAI

IPC: H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32825 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67248

Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.

Abstract translation: 公开了一种等离子体处理装置，其用于在将晶片安装在样品台上之后，通过使用在处理室中产生的等离子体来处理设置在真空容器内的处理室中的样品台上的晶片。 该装置在样品台内部的沿径向和周向划分的区域中具有加热器。 至少布置在位于径向外部位置的区域中的加热器包括串联连接的周向布置的加热器部分。 由这些周向布置的加热器部分产生的热量被调节。