公开(公告)号：US20190287770A1

公开(公告)日：2019-09-19

申请号：US16110005

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Taku IWASE ,  Tsutomu TETSUKA ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus improves uniformity of a plasma in a radial direction, generation efficiency of plasma, and a yield of a process, and the apparatus includes a sample stage which includes a dielectric susceptor ring located surrounding a top surface of the sample stage on an outer peripheral and a dielectric lower ring-shaped plate located at a position lower than a top surface of the susceptor ring on its outer peripheral side. A difference in height between the top surfaces of the lower ring-shaped plate and the sample is set in a range of around 5 mm of a value found by a formula using a distance: G [mm] between the upper and the lower electrodes, a frequency: f [MHz] of a first high-frequency power, and a pressure: P [Pa] in the processing chamber, and −0.1×G−0.06×f−4.4×ln(P)+22.

公开(公告)号：US20190198299A1

公开(公告)日：2019-06-27

申请号：US16110081

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyuki WATANABE ,  Yutaka KOUZUMA ,  Takumi TANDOU ,  Kenetsu YOKOGAWA ,  Hiroshi ITO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

公开(公告)号：US20170025254A1

公开(公告)日：2017-01-26

申请号：US15216148

申请日：2016-07-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Takamasa ICHINO ,  Kenetsu YOKOGAWA ,  Yutaka OHMOTO

IPC: H01J37/32 ,  C23C16/50 ,  C23C14/48

CPC classification number: H01J37/32009 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device includes: a processing chamber which is disposed in a vacuum vessel and is compressed; a sample stage which is disposed in the processing chamber and on which a wafer of a process target is disposed and held; and a mechanism for forming plasma in the processing chamber on the sample stage, wherein the sample stage includes a block which is made of a dielectric and has a discoid shape, a jacket which is disposed below the block with a gap therebetween, is made of a metal, and has a discoid shape, a recessed portion which is disposed in a center portion of a top surface of the jacket and into which a cylindrical member disposed below a center portion of the block and made of a dielectric is inserted, and a cooling medium flow channel disposed in the jacket and through which a cooling medium circulates.

Abstract translation: 等离子体处理装置包括：处理室，其设置在真空容器中并被压缩; 设置在处理室中并且处理对象的晶片被放置并保持在其上的样本台; 以及用于在样品台上的处理室中形成等离子体的机构，其中样品台包括由电介质制成并具有圆盘状的块，在其间具有间隙的块下方设置的护套由 金属，并且具有圆盘状，凹部设置在所述护套的上表面的中心部分，并且插入设置在所述块的中心部分下方并由电介质构成的圆柱形构件，并且 冷却介质流动通道设置在外壳中，冷却介质通过该通道循环。

公开(公告)号：US20190198297A1

公开(公告)日：2019-06-27

申请号：US16111796

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.

公开(公告)号：US20180040459A1

公开(公告)日：2018-02-08

申请号：US15425014

申请日：2017-02-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Masahito MORI ,  Takao ARASE ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32724 ,  H01J37/32871 ,  H01J2237/334

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

公开(公告)号：US20160079073A1

公开(公告)日：2016-03-17

申请号：US14626909

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Miyako MATSUI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO ,  Tetsuo ONO ,  Kazunori SHINODA

IPC: H01L21/3065

CPC classification number: H01L21/32137 ,  B81C1/00531 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

Abstract: A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.

Abstract translation: 等离子体处理方法包括：将预先设置的待加工膜与反应性的气体引入晶片的上表面的第一步骤，以在膜上形成粘合层; 在停止具有反应性的气体的供给的同时排出残留在处理室中的一部分气体的第二步骤; 将稀有气体引入处理室中以在等离子体中形成等离子体并使用粒子和真空紫外光解吸粘合层和待加工膜的反应产物的第三步骤; 以及在不形成等离子体时排出反应产物的第四步骤。

公开(公告)号：US20170278730A1

公开(公告)日：2017-09-28

申请号：US15469684

申请日：2017-03-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Kenetsu YOKOGAWA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32541 ,  H01J37/32192 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68742

Abstract: A plasma processing apparatus including a sample stage arranged in a processing chamber, a temperature regulator arranged in an interior of the sample stage, a film made of a dielectric that configures the upper surface of the sample stage, and including a film-like electrode therein, a protruding portion arranged on an upper surface of the film made of a dielectric on an outer periphery-side area, and arranged to surround a center-side area of the upper surface in a ring manner, a power source that supplies power for forming electrostatic force that absorbs a wafer arranged above the electrode in the film made of a dielectric, and a controller that regulates the power from the power source and the gas introduction between the wafer and the film to hold the wafer above the film in a noncontact manner.

公开(公告)号：US20160351404A1

公开(公告)日：2016-12-01

申请号：US15057157

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

Abstract translation: 一种等离子体处理装置或等离子体处理方法，其使用处理室中形成的等离子体处理放置在真空容器内的处理室中的样品台的表面上的被处理晶片，该装置或方法 包括通过调节要供给到布置在所述样品台内部的第一电极的第一高频功率和经由谐振电路将待提供的第二高频功率来施加到所述晶片的第二电极，所述第二电极布置在内部 在处理期间在布置在其上放置晶片的样品台的表面的外周侧上的由电介质制成的环形构件的侧面。

公开(公告)号：US20140231015A1

公开(公告)日：2014-08-21

申请号：US14262466

申请日：2014-04-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract translation: 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。

公开(公告)号：US20200083026A1

公开(公告)日：2020-03-12

申请号：US16561785

申请日：2019-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Takamasa ICHINO ,  Kohei SATO ,  Kazunori NAKAMOTO ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.