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    Electrode Substrate and Its Manufacturing Method
    1.
    发明申请
    Electrode Substrate and Its Manufacturing Method 审中-公开
    电极基板及其制造方法

    公开(公告)号：US20070247066A1

    公开(公告)日：2007-10-25

    申请号：US11547391

    申请日：2004-04-06

    申请人： Hiroshi Tokairin ,  Yoshikazu Nagasaki ,  Tadao Shibuya

    发明人： Hiroshi Tokairin ,  Yoshikazu Nagasaki ,  Tadao Shibuya

    IPC分类号： H01J1/62 ,  H01J9/02

    CPC分类号： H01L51/0096 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5088 ,  H01L51/5206 ,  Y02E10/549 ,  Y02P70/521

    摘要： The purpose is to remove surface-defective layer existing on the surface of an anode on a CCM substrate, protect the anode surface, prevent a drive voltage of an organic EL element from rising, and maintain uniformity of luminescence. On a substrate (12) a CCM layer (14) for converting light wavelength is formed. On the CCM layer (14) an anode (16) of IZO is formed. On the anode (16) a surface protective layer (18) containing an inorganic compound is formed by an inductively coupled RF plasma support magnetron sputtering. A preferable inorganic compound is SiO2. The surface defective layer of the anode (16) can be removed by the sputtering and the state of being removed can be held by the inorganic compound. Therefore the electrical stability of the anode (16) can be maintained for a long time, thereby improving the display quality of an organic EL display (100).

    摘要翻译： 目的是去除存在于CCM基板上的阳极表面上的表面缺陷层，保护阳极表面，防止有机EL元件的驱动电压升高，并保持发光均匀性。 在衬底（12）上形成用于转换光波长的CCM层（14）。 在CCM层（14）上形成IZO的阳极（16）。 在阳极（16）上，通过感应耦合的RF等离子体支撑磁控溅射法形成含有无机化合物的表面保护层（18）。 优选的无机化合物是SiO 2。 可以通过溅射去除阳极（16）的表面缺陷层，并且被除去的状态可以由无机化合物保持。 因此，可以长时间保持阳极（16）的电稳定性，从而提高有机EL显示器（100）的显示质量。

    Organic electroluminescence element and production method thereof
    5.
    发明授权
    Organic electroluminescence element and production method thereof 失效
    有机电致发光元件及其制造方法

    公开(公告)号：US06828045B1

    公开(公告)日：2004-12-07

    申请号：US10460678

    申请日：2003-06-13

    申请人： Hiroshi Tokailin ,  Yoshikazu Nagasaki ,  Tadao Shibuya

    发明人： Hiroshi Tokailin ,  Yoshikazu Nagasaki ,  Tadao Shibuya

    IPC分类号： H05B3326

    CPC分类号： H01L51/5088 ,  H01L51/442 ,  H01L51/5206 ,  Y02E10/549 ,  Y10S428/917 ,  Y10T428/26

    摘要： An organic EL element comprising: an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d5/2]h/[In3d5/2]n, is from 0.9 to 1.2 wherein [In3d5/2]h is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the surface of the anode, and [In3d5/2]n is the half band width of a spectral peak derived from a 3d5/2 orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

    摘要翻译： 一种有机EL元件，包括：阳极，阴极和夹在其间的至少一个发光层的有机层，其中[In3d5 / 2] h / [In3d5 / 2] n的比例为0.9〜1.2，其中[ In3d5 / 2] h是从阳极表面的In原子的3d5 / 2轨道衍生的光谱峰的半带宽，[In3d5 / 2] n是衍生自 在阳极内部的In原子的3d5 / 2轨道，通过X射线光电子能谱（XPS）测量的光谱峰及其制造方法。

    Method for depositing thin film for element, and organic electroluminescence element
    7.
    发明授权
    Method for depositing thin film for element, and organic electroluminescence element 失效
    用于沉积元素薄膜的方法和有机电致发光元件

    公开(公告)号：US06995507B2

    公开(公告)日：2006-02-07

    申请号：US10608138

    申请日：2003-06-30

    申请人： Hiroshi Tokailin ,  Yoshikazu Nagasaki

    发明人： Hiroshi Tokailin ,  Yoshikazu Nagasaki

    IPC分类号： H05B33/00

    CPC分类号： H01L51/0008 ,  C09K11/06 ,  C23C14/12 ,  C23C14/24 ,  H01L51/001 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/007 ,  H01L51/0081 ,  H01L2251/308 ,  H05B33/10 ,  H05B33/14 ,  Y10S428/917

    摘要： The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i∝(L0/Li)3cosniθi  (1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle θi against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.

    摘要翻译： 本发明涉及一种通过真空蒸发沉积两种或更多种材料在衬底上形成一种或多种薄膜的方法，包括：在每种材料的ni值为k±0.5的情况下沉积每种材料，其中k为常数 从2到5，当衬底上的材料i的沉积位置和膜厚之间的关系由下式近似时

    Method for forming thin-film layer for device and organic electroluminescence device
    8.
    发明授权
    Method for forming thin-film layer for device and organic electroluminescence device 失效
    用于器件和有机电致发光器件的薄膜层的形成方法

    公开(公告)号：US06649210B2

    公开(公告)日：2003-11-18

    申请号：US09959655

    申请日：2001-11-02

    申请人： Hiroshi Tokailin ,  Yoshikazu Nagasaki

    发明人： Hiroshi Tokailin ,  Yoshikazu Nagasaki

    IPC分类号： C23C1424

    CPC分类号： H01L51/0008 ,  C09K11/06 ,  C23C14/12 ,  C23C14/24 ,  H01L51/001 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/007 ,  H01L51/0081 ,  H01L2251/308 ,  H05B33/10 ,  H05B33/14 ,  Y10S428/917

    摘要： The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i∝(L0/Li)3 cosni&thgr;i  (1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle &thgr;i against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.

    摘要翻译： 本发明涉及一种通过真空蒸发沉积两种或更多种材料在衬底上形成一种或多种薄膜的方法，包括：在每种材料的ni值为k±0.5的情况下沉积每种材料，其中k为常数 从2到5，当衬底上的材料i的沉积位置和膜厚之间的关系由下面的等式（1）近似时：其中L0是垂直于基底的蒸发源到平面的距离 方向，D0i是从蒸发源到基板的平面的垂直线的交点处的材料i的膜厚度，Di是基板上位于与基板不同的位置处的材料i的膜厚度 蒸发源在与垂直线成角度的方向上距离为Li。 通过该方法，即使在具有大屏幕的基板上也可以形成均匀的元件用薄膜层。