公开(公告)号：US08437180B2

公开(公告)日：2013-05-07

申请号：US12795933

申请日：2010-06-08

申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

公开(公告)号：US08072789B2

公开(公告)日：2011-12-06

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/22 ,  G11C11/14 ,  G11C11/04

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

公开(公告)号：US07660153B2

公开(公告)日：2010-02-09

申请号：US12014478

申请日：2008-01-15

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659

摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

公开(公告)号：US20080197433A1

公开(公告)日：2008-08-21

申请号：US12034461

申请日：2008-02-20

申请人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  Y10S977/933

摘要： Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

摘要翻译： 公开了一种存储器件，其包括：基于磁体的磁化状态保持其上的信息的存储器层;通过非磁性层形成在存储层上的具有固定磁化方向的固定磁化层;以及两个金属布线 在存储器中与固定磁化层的两端相邻地形成，通过使堆积方向的电流通过而使存储层的磁化方向变化，从而将信息记录在存储层上。

公开(公告)号：US20080151607A1

公开(公告)日：2008-06-26

申请号：US11940915

申请日：2007-11-15

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/02

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.

摘要翻译： 公开了一种存储元件，其具有基于磁性材料的磁化状态保持信息的存储层; 具有铁磁层的固定磁化层; 以及介于所述存储层和所述固定磁化层之间的中间层。 在存储元件中，沿层叠方向注入自旋极化电子以改变存储层的磁化方向，从而将信息记录在存储层中，形成存储层的铁磁层的电阻率为8×10 -6， 7欧姆以上。

公开(公告)号：US08331136B2

公开(公告)日：2012-12-11

申请号：US12821886

申请日：2010-06-23

申请人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

发明人： Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Hiroshi Kano ,  Minoru Ikarashi ,  Yuki Oishi ,  Shinichiro Kusunoki

IPC分类号： G11C11/15

CPC分类号： G11C13/0007 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/79

摘要： A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

摘要翻译： 一种非易失性存储器的记录方法，包括：电气地执行具有连接到用于信息记录的电源的电阻变化的信息存储装置的信息的记录的记录电路，包括以下步骤：以低电阻状态记录信息 在信息存储装置的记录电路的输出阻抗大于信息存储装置的低电阻状态下的电阻值的条件下，记录电路; 并且在信息存储装置的记录电路的输出阻抗小于信息存储装置的高电阻状态下的电阻值的条件下，通过记录电路将信息记录在高电阻状态。

公开(公告)号：US08089802B2

公开(公告)日：2012-01-03

申请号：US12034461

申请日：2008-02-20

申请人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  Y10S977/933

摘要： Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer. In the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

摘要翻译： 公开了一种存储器件，其包括：基于磁体的磁化状态保持其上的信息的存储器层;通过非磁性层形成在存储层上的具有固定磁化方向的固定磁化层;以及两个金属布线 形成在固定磁化层的两端附近。 在存储器中，存储层的磁化方向通过在堆叠方向上通过电流来改变，以将信息记录在存储层上。

公开(公告)号：US07881097B2

公开(公告)日：2011-02-01

申请号：US11940915

申请日：2007-11-15

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.

摘要翻译： 公开了一种存储元件，其具有基于磁性材料的磁化状态保持信息的存储层; 具有铁磁层的固定磁化层; 以及介于所述存储层和所述固定磁化层之间的中间层。 在存储元件中，沿堆叠方向注入自旋极化电子以改变存储层的磁化方向，从而将信息记录在存储层中，形成存储层的铁磁层的电阻率为8×10-7 ＆OHgr; m以上。

公开(公告)号：US20100328998A1

公开(公告)日：2010-12-30

申请号：US12795933

申请日：2010-06-08

申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

公开(公告)号：US20100200939A1

公开(公告)日：2010-08-12

申请号：US12668925

申请日：2008-06-30

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.

摘要翻译： 提供了能够在不增加写入电流的情况下提高热稳定性的存储器。 存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层 层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真 其存在于存储层周围并且具有比存储层更小的热膨胀系数。 一种用于提供在存储元件的层叠方向上流动的电流的布线。