公开(公告)号：US20130284921A1

公开(公告)日：2013-10-31

申请号：US13924213

申请日：2013-06-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Minoru Yamazaki ,  Akira Ikegami ,  Hideyuki Kazumi ,  Osamu Nasu

IPC: G01N23/225

CPC classification number: G01N23/2251 ,  G01R29/24 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/221 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594

Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.

公开(公告)号：US09000366B2

公开(公告)日：2015-04-07

申请号：US13855977

申请日：2013-04-03

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsuko Yamaguchi ,  Yasunari Sohda ,  Tatsuya Maeda ,  Osamu Nasu ,  Hiroki Kawada

IPC: H01J37/26 ,  G01N23/00

CPC classification number: H01J37/265 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/2817

Abstract: In order that a displacement between patterns of different heights, formed on a sample in a plurality of different pattern-forming steps, can be measured at fixed throughput and with high accuracy, correspondence between parameters of lenses and beam deflector of an electron optical system and an angle of incidence of a beam upon the sample is recorded as data, then a correction value for the amount of displacement or edge positions is calculated, and a true amount of displacement is calculated from the correction value and an image under observation.

Abstract translation: 为了在多个不同的图案形成步骤中形成在样品上的不同高度的图案之间的位移可以以固定的生产量和高精度测量，透镜的参数和电子光学系统的光束偏转器之间的对应关系，以及 将样本上的光束的入射角记录为数据，然后计算位移量或边缘位置的校正值，并根据校正值和观察图像计算真实的位移量。

公开(公告)号：US08766182B2

公开(公告)日：2014-07-01

申请号：US13924213

申请日：2013-06-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Minoru Yamazaki ,  Akira Ikegami ,  Hideyuki Kazumi ,  Osamu Nasu

IPC: H01J37/26

CPC classification number: G01N23/2251 ,  G01R29/24 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/221 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594

Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.

Abstract translation: 本发明的目的是提供一种方法和装置，用于使用带电粒子束测量样品表面上的电位，同时抑制由带电粒子束施加引起的样品上的电位变化，或检测补偿 用于由样品带电引起的装置的状况改变的值。 为了实现上述目的，本发明提供了一种向样品施加电压使得带电粒子束不能到达样品的方法和装置（以下称为“镜像状态”），其中 将带电粒子束施加到样品的状态，以及使用通过该电压施加获得的信号检测与样品上的电位有关的信息。