公开(公告)号：US20090039441A1

公开(公告)日：2009-02-12

申请号：US11837161

申请日：2007-08-10

申请人： Hongfa Luna ,  Kisik Choi ,  Prashant Majhi ,  Husam Alshareef ,  Huang-Chun Wen ,  Rusty Harris ,  Byoung Hun Lee

发明人： Hongfa Luna ,  Kisik Choi ,  Prashant Majhi ,  Husam Alshareef ,  Huang-Chun Wen ,  Rusty Harris ,  Byoung Hun Lee

IPC分类号： H01L27/08 ,  H01L21/8238

CPC分类号： H01L21/823842 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

摘要： Devices comprising, and method for fabricating, a MOSFET with a metal gate electrode are disclosed. In one embodiment, the MOSFET includes a first doped region configured to receive current from a current source, a second doped region configured to drain current from the first doped region when an electric field is modified between the first doped region and the second doped region, and a gate electrode configured to modify the electric field. The gate electrode may include a high-k layer, a hafnium-based metal layer formed above the high-k layer, and a polysilicon layer formed above the hafnium-based metal layer. In a further embodiment, the gate electrode further comprises a titanium-based metal layer formed between the hafnium-based metal layer and the polysilicon layer.

摘要翻译： 公开了包括用于制造具有金属栅电极的MOSFET的器件及其制造方法。 在一个实施例中，MOSFET包括被配置为从电流源接收电流的第一掺杂区域，被配置为当在第一掺杂区域和第二掺杂区域之间修改电场时从第一掺杂区域漏极电流的第二掺杂区域， 以及构造成修改电场的栅电极。 栅电极可以包括形成在高k层上方的高k层，铪基金属层和形成在铪基金属层上方的多晶硅层。 在另一实施例中，栅电极还包括在铪基金属层和多晶硅层之间形成的钛基金属层。