公开(公告)号：US3869322A

公开(公告)日：1975-03-04

申请号：US40641573

申请日：1973-10-15

Applicant: IBM

Inventor： CUOMO JEROME J ,  HOVEL HAROLD J

IPC: H01L21/22 ,  H01L21/205 ,  H01L21/225 ,  H01L7/36

CPC classification number: H01L21/2254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  Y10S148/007 ,  Y10S148/059 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/113 ,  Y10S148/148

Abstract: A process for the preparation of a homojunction in a semiconductor substrate, e.g., a p-n junction, during growth of a heterojunction between the substrate and a second semiconductor consisting of either gallium nitride or aluminum nitride where aluminum atoms from the aluminum nitride or gallium atoms from the gallium nitride diffuse into the substrate in a region of the substrate adjacent the aluminum nitride or gallium nitride to form the homojunction.

Abstract translation: 在衬底和由氮化铝或氮化铝组成的第二半导体之间的异质结生长期间在半导体衬底（例如pn结）中制备均相的方法，其中来自氮化铝或镓原子的铝原子 氮化镓在与氮化铝或氮化镓相邻的衬底的区域中扩散到衬底中以形成均匀结。