公开(公告)号：US3704166A

公开(公告)日：1972-11-28

申请号：US3704166D

申请日：1969-06-30

Applicant: IBM

Inventor： CUOMO JEROME J ,  MAYADAS ASHOK F ,  ROSENBERG ROBERT

IPC: C23C14/24 ,  C04B41/00 ,  H01L21/00 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/29 ,  B44D1/18

CPC classification number: H01L21/00 ,  C04B41/0027 ,  H01L21/32051 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/158 ,  Y10S148/169 ,  H01L2924/00

Abstract: A METHOD FOR IMPROVING ADHESION BETWEEN A CONDUCTIVE LAYER AND A SUBSTRATE OF INSULATING MATERIAL IS TAUGHT WHICH INCLUDES THE STEPS OF PROVIDING A SUBSTRATE OF INSULATING MATERIAL SUCH AS SILICON DIOXIDE WHICH CONTAINS A FIRST CATION AND A FIRST ANION. A SECOND CATION SUCH AS ALUMINUM IS INTRODUCED INTO THE SUBSTRATE SUBSTITUTIONALLY BY DIFFUSION OR ION BOMBARDMENT. FINALLY, A LAYER OF CONDUCTIVE MATERIAL IS DEPOSITED ON THE SURFACE OF THE SUBSTRATE BY VACUUM EVAPORATION OF SPUTTERING. THE CONDUCTIVE MATERIAL INCLUDES A THIRD CTION SUCH AS TUNGSTEN WHICH HAS AN AFFINITY FOR THE FIRST ANION. THE INTRODUCTION OF THE SECOND CATION TO CARRIED OUT IN ONLY THE SURFACE LAYERS OF THE SUBSTRATE SUCH THAT DIELECTRIC CHARACTERISTICS OF THE SUBSTRATE ARE SUBSTANTIALLY UNAFFECTED. THE INVENTION BASICALLY TEACHES PROVIDING SITES, IN A INSULATING SUBSTRATE, CONTAINING UNBOUND ATOMS WHICH ARE CAPABLE OF CHEMICALLY BONDING WITH THE DEPOSITED CONDUCTIVE MATERIAL THEREBY OBTAINING IMPROVED ADHESION AT LOW TEMPERATURE (E.G. AT TEMPERATURES OF

500*C. AND BELOW FOR W OR MO, WHEREAS WITHOUT THE SITES PROVIDED, POOR ADHESION WOULD TAKE PLACE BELOW 500*C.).

公开(公告)号：US3887451A

公开(公告)日：1975-06-03

申请号：US31958972

申请日：1972-12-29

Applicant: IBM

Inventor： CUOMO JEROME J ,  MAYADAS ASHOK F ,  ROSENBERG ROBERT ,  SADAGOPAN VARADACHARI

IPC: C23C14/35 ,  C23C15/00

CPC classification number: C23C14/35

Abstract: A method is disclosed for sputtering epitaxially a layer of stoichiometric garnet composition from a single target wherein the target is composed of a mixture of the separate components of the sputtered layer. Illustratively, both at a substrate temperature of approximately 450*C and at another substrate temperature between 800-850*C, there was obtained formation of a film of gallium substituted yttrium iron garnet (Ga:YIG). A target was made up of the desired stoichiometry with a mixture of the individual oxides pressed to 85% of the compound''s theoretical density. Generally, the steps of the method are: (1) applying a radiofrequency bias to the substrate during sputtering to prevent the deposition of an easily resputtered component of the target; and (2) changing the power density to the target during deposition. Specifically, a target was made up of a mixture of individual oxides Y2O3 + Ga2O3 + Fe2O3 which was pressed to 85% of its theoretical density. Exemplary films of stoichiometric composition were obtained with a radio-frequency bias on the substrate in the range approximately from ground to 100 volts and with power density to the target in the range of approximately 5 to 65 watts/in2. The stoichiometric ratio for the composition was Y3Fe(5 x)GaxO12, where 0

Abstract translation: 公开了一种用于从单一靶外溅射一层化学计量的石榴石组合物的方法，其中靶由溅射层的分离组分的混合物组成。