公开(公告)号：US20200185579A1

公开(公告)日：2020-06-11

申请号：US16706002

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Zsolt Tokei ,  Paul Heremans

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/62

Abstract: A Light Emitting Diode (LED) device, particularly a micro-LED (μLED) device, suitable for a μLED display is described. The LED device comprises a LED array with a plurality of LEDs 12. It also comprises at least one top contact and bottom contact electrically connected to the LED array. Further, it comprises a conductive structure arranged above the LED array and the top contact, respectively, and electrically connected to the top contact. The conductive structure is, regarding each LED of the LED array, configured to absorb a first part of the light emitted by the LED, and to pass a second part of the light emitted by the LED. An emission angle (beam angle) of the passed light is thereby smaller than an emission angle of the light emitted by the LED.

公开(公告)号：US11271283B2

公开(公告)日：2022-03-08

申请号：US16766994

申请日：2018-12-21

Applicant: IMEC VZW

Inventor： Alexander Mityashin ,  Soeren Steudel ,  Kris Myny ,  Nikolaos Papadopoulos ,  Vlatko Milosevski ,  Paul Heremans

IPC: H01Q1/24 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q1/52 ,  H01Q9/04

Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

公开(公告)号：US11005016B2

公开(公告)日：2021-05-11

申请号：US16706002

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Zsolt Tokei ,  Paul Heremans

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/62

Abstract: A Light Emitting Diode (LED) device, particularly a micro-LED (μLED) device, suitable for a μLED display is described. The LED device comprises a LED array with a plurality of LEDs 12. It also comprises at least one top contact and bottom contact electrically connected to the LED array. Further, it comprises a conductive structure arranged above the LED array and the top contact, respectively, and electrically connected to the top contact. The conductive structure is, regarding each LED of the LED array, configured to absorb a first part of the light emitted by the LED, and to pass a second part of the light emitted by the LED. An emission angle (beam angle) of the passed light is thereby smaller than an emission angle of the light emitted by the LED.