公开(公告)号：US20180024618A1

公开(公告)日：2018-01-25

申请号：US15652737

申请日：2017-07-18

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Liesbet Van der Perre ,  Bruno Mollekens

IPC: G06F1/32

CPC classification number: G06F1/3287 ,  G06F1/3243 ,  G06F1/3296 ,  H01L23/525 ,  H01L27/12 ,  H03K17/687 ,  Y02D10/171 ,  Y02D50/20

Abstract: An integrated circuit device comprising a power control unit for controlling the power of a power isle is disclosed. The power control unit comprises (i) a power gating switch implemented in the BEOL portion for switching ON/OFF the power to the power isle, (ii) a state recovery circuit comprising a memory element in the FEOL portion or BEOL portion and a transistor configuration in the BEOL portion, and (iii) a wake-up/sleep circuit in the BEOL portion adapted for receiving an identifier. The wake-up/sleep circuit is operatively connected with the power gating switch and with the state recovery circuit. Responsive to receiving the identifier, the wake-up/sleep circuit causes the power gating switch to switch OFF/ON the supply power to the power isle and causes the state recovery circuit to store/restore the state of the power isle.

公开(公告)号：US20150162448A1

公开(公告)日：2015-06-11

申请号：US14565159

申请日：2014-12-09

Applicant: IMEC VZW

Inventor： Praveen Raghavan ,  Jan Genoe ,  Soeren Steudel

IPC: H01L29/786 ,  H01L29/66 ,  H03K17/687 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L23/525 ,  H01L23/5286 ,  H01L23/53238 ,  H01L23/53295 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L2924/0002 ,  H03K17/687 ,  H01L2924/00

Abstract: The disclosed technology generally relates to integrated circuit (IC), and more particularly to IC devices having one or more power gating switches and methods of fabricating the same. In one aspect, an IC device comprises a front end-of-the-line (FEOL) portion and a back end-of-the-line (BEOL) portion electrically connected to the FEOL portion. The BEOL portion comprises a plurality of metallization levels, wherein each metallization level comprises a plurality of metal lines extending in a lateral direction and a plurality of conductive vertical via structures. The IC device further comprises a power gating transistor formed in the BEOL portion and in direct electrical contact with at least one of the via structures or one of the metal lines.

Abstract translation: 所公开的技术通常涉及集成电路（IC），更具体地涉及具有一个或多个电源门控开关的IC器件及其制造方法。 一方面，IC器件包括电连接到FEOL部分的前端（FEOL）部分和后端（BEOL）部分。 BEOL部分包括多个金属化水平，其中每个金属化水平包括沿横向方向延伸的多个金属线和多个导电垂直通孔结构。 IC器件还包括形成在BEOL部分中并与至少一个通孔结构或金属线之一直接电接触的电源门控晶体管。

公开(公告)号：US11005016B2

公开(公告)日：2021-05-11

申请号：US16706002

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Zsolt Tokei ,  Paul Heremans

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/62

Abstract: A Light Emitting Diode (LED) device, particularly a micro-LED (μLED) device, suitable for a μLED display is described. The LED device comprises a LED array with a plurality of LEDs 12. It also comprises at least one top contact and bottom contact electrically connected to the LED array. Further, it comprises a conductive structure arranged above the LED array and the top contact, respectively, and electrically connected to the top contact. The conductive structure is, regarding each LED of the LED array, configured to absorb a first part of the light emitted by the LED, and to pass a second part of the light emitted by the LED. An emission angle (beam angle) of the passed light is thereby smaller than an emission angle of the light emitted by the LED.

公开(公告)号：US10331201B2

公开(公告)日：2019-06-25

申请号：US15652737

申请日：2017-07-18

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Liesbet Van der Perre ,  Bruno Mollekens

IPC: G06F1/32 ,  G06F1/3287 ,  G06F1/3234 ,  G06F1/3296 ,  H01L23/525 ,  H01L27/12 ,  H03K17/687

Abstract: An integrated circuit device comprising a power control unit for controlling the power of a power isle is disclosed. The power control unit comprises (i) a power gating switch implemented in the BEOL portion for switching ON/OFF the power to the power isle, (ii) a state recovery circuit comprising a memory element in the FEOL portion or BEOL portion and a transistor configuration in the BEOL portion, and (iii) a wake-up/sleep circuit in the BEOL portion adapted for receiving an identifier. The wake-up/sleep circuit is operatively connected with the power gating switch and with the state recovery circuit. Responsive to receiving the identifier, the wake-up/sleep circuit causes the power gating switch to switch OFF/ON the supply power to the power isle and causes the state recovery circuit to store/restore the state of the power isle.

公开(公告)号：US20210278555A1

公开(公告)日：2021-09-09

申请号：US16332592

申请日：2017-08-30

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Florian De Roose ,  Rainer Kuth ,  Soeren Steudel ,  Sandro Francesco Tedde

IPC: G01T1/24 ,  H04N5/32 ,  G01T1/20

Abstract: An example includes sensing radiation with a photo diode; storing, in a pixel capacitor electrically coupled to the photo diode, electric charge supplied by the photo diode in response to the sensed radiation; providing a pixel amplifier output signal at an output link of a pixel amplifier having an input link electrically coupled to the pixel capacitor, where the pixel amplifier output signal depends on an amount of the electric charge stored in the capacitor; providing, to analyzing circuitry of the image sensor apparatus, a pixel output signal at a pixel output link of the radiation sensing pixel element by a pixel selector transistor, the pixel output signal being dependent on the pixel amplifier output signal and a selector control signal provided by the analyzing circuitry; and controlling a gain defining a dependency between the pixel output signal and the amount of the electric charge stored in the capacitor.

公开(公告)号：US20200185579A1

公开(公告)日：2020-06-11

申请号：US16706002

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Zsolt Tokei ,  Paul Heremans

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/62

Abstract: A Light Emitting Diode (LED) device, particularly a micro-LED (μLED) device, suitable for a μLED display is described. The LED device comprises a LED array with a plurality of LEDs 12. It also comprises at least one top contact and bottom contact electrically connected to the LED array. Further, it comprises a conductive structure arranged above the LED array and the top contact, respectively, and electrically connected to the top contact. The conductive structure is, regarding each LED of the LED array, configured to absorb a first part of the light emitted by the LED, and to pass a second part of the light emitted by the LED. An emission angle (beam angle) of the passed light is thereby smaller than an emission angle of the light emitted by the LED.

公开(公告)号：US09553586B2

公开(公告)日：2017-01-24

申请号：US14565316

申请日：2014-12-09

Applicant: IMEC VZW

Inventor： Jan Genoe ,  Soeren Steudel ,  Zsolt Tokei

IPC: H03K19/0185 ,  H03K17/693 ,  G06F9/455 ,  H03K19/177 ,  H01L27/06 ,  H01L27/108

CPC classification number: H03K19/018585 ,  H01L27/0688 ,  H01L27/10873 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H03K19/1776 ,  H03K19/17796

Abstract: A Field-Programmable Gate Array device is provided with programmable interconnect points in the form of interconnect circuits comprising one or more pass transistors, wherein at least some components of the interconnect circuits are implemented in the Back-End-Of-Line part of the Field-Programmable Gate Array device's production process. The memory element in an interconnect point is not produced as a Static Random Access Memory cell, but as a Dynamic Random Access Memory cell, requiring only a single select transistor and a storage capacitor for each memory element. The fabrication of at least the select transistor and the pass transistor involves the use of a thin film semiconductor layer, e.g., Indium Gallium Zinc Oxide, enabling production of transistors with low leakage in the Back-End-Of-Line.

Abstract translation: 现场可编程门阵列器件提供有包括一个或多个传输晶体管的互连电路形式的可编程互连点，其中互连电路的至少一些部件被实现在场的后端部分 - 可编程门阵列器件的生产工艺。 互连点中的存储元件不是作为静态随机存取存储器单元产生的，而是作为动态随机存取存储器单元，仅对每个存储元件仅需要一个选择晶体管和存储电容器。 至少选择晶体管和传输晶体管的制造涉及使用诸如铟镓锌氧化物的薄膜半导体层，使得能够在后端在线生产具有低泄漏的晶体管。

公开(公告)号：US20150162913A1

公开(公告)日：2015-06-11

申请号：US14565316

申请日：2014-12-09

Applicant: IMEC VZW

Inventor： Jan Genoe ,  Soeren Steudel ,  Zsolt Tokei

IPC: H03K19/0185

CPC classification number: H03K19/018585 ,  H01L27/0688 ,  H01L27/10873 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H03K19/1776 ,  H03K19/17796

Abstract: A Field-Programmable Gate Array device is provided with programmable interconnect points in the form of interconnect circuits comprising one or more pass transistors, wherein at least some components of the interconnect circuits are implemented in the Back-End-Of-Line part of the Field-Programmable Gate Array device's production process. The memory element in an interconnect point is not produced as a Static Random Access Memory cell, but as a Dynamic Random Access Memory cell, requiring only a single select transistor and a storage capacitor for each memory element. The fabrication of at least the select transistor and the pass transistor involves the use of a thin film semiconductor layer, e.g., Indium Gallium Zinc Oxide, enabling production of transistors with low leakage in the Back-End-Of-Line.

Abstract translation: 现场可编程门阵列器件提供有包括一个或多个传输晶体管的互连电路形式的可编程互连点，其中互连电路的至少一些部件被实现在场的后端部分 - 可编程门阵列器件的生产工艺。 互连点中的存储元件不是作为静态随机存取存储器单元产生的，而是作为动态随机存取存储器单元，仅对每个存储元件仅需要一个选择晶体管和存储电容器。 至少选择晶体管和传输晶体管的制造涉及使用诸如铟镓锌氧化物的薄膜半导体层，使得能够在后端在线生产具有低泄漏的晶体管。

公开(公告)号：US11316066B2

公开(公告)日：2022-04-26

申请号：US16708014

申请日：2019-12-09

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Alexander Mityashin ,  Eric Beyne ,  Maarten Rosmeulen

IPC: H01L33/00 ,  H01L25/075 ,  H01L27/146 ,  H01L33/06 ,  H01L33/62

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (μLED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.

公开(公告)号：US11271283B2

公开(公告)日：2022-03-08

申请号：US16766994

申请日：2018-12-21

Applicant: IMEC VZW

Inventor： Alexander Mityashin ,  Soeren Steudel ,  Kris Myny ,  Nikolaos Papadopoulos ,  Vlatko Milosevski ,  Paul Heremans

IPC: H01Q1/24 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q1/52 ,  H01Q9/04

Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.