公开(公告)号：US11316066B2

公开(公告)日：2022-04-26

申请号：US16708014

申请日：2019-12-09

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Alexander Mityashin ,  Eric Beyne ,  Maarten Rosmeulen

IPC: H01L33/00 ,  H01L25/075 ,  H01L27/146 ,  H01L33/06 ,  H01L33/62

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (μLED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.

公开(公告)号：US11271283B2

公开(公告)日：2022-03-08

申请号：US16766994

申请日：2018-12-21

Applicant: IMEC VZW

Inventor： Alexander Mityashin ,  Soeren Steudel ,  Kris Myny ,  Nikolaos Papadopoulos ,  Vlatko Milosevski ,  Paul Heremans

IPC: H01Q1/24 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q1/52 ,  H01Q9/04

Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

公开(公告)号：US11069648B2

公开(公告)日：2021-07-20

申请号：US16705702

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Alexander Mityashin ,  Soeren Steudel

IPC: H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/32

Abstract: A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400° C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.

公开(公告)号：US20200185566A1

公开(公告)日：2020-06-11

申请号：US16708014

申请日：2019-12-09

Applicant: IMEC VZW

Inventor： Soeren Steudel ,  Alexander Mityashin ,  Eric Beyne ,  Maarten Rosmeulen

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/62 ,  H01L27/146

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (μLED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.

公开(公告)号：US20200185351A1

公开(公告)日：2020-06-11

申请号：US16705702

申请日：2019-12-06

Applicant: IMEC VZW

Inventor： Alexander Mityashin ,  Soeren Steudel

IPC: H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/32

Abstract: A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400° C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.