公开(公告)号：US20240178051A1

公开(公告)日：2024-05-30

申请号：US18524355

申请日：2023-11-30

Applicant: IMEC VZW

Inventor： Anabela Veloso ,  Rongmei Chen ,  An De Keersgieter ,  Geert Eneman ,  Philippe Matagne

IPC: H01L21/74 ,  H01L21/768

CPC classification number: H01L21/743 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/823431

Abstract: A method includes: forming a structure on a frontside of a substrate, the structure including a first and a second source/drain body located in a first and a second source/drain region, respectively, and a channel body including a channel layer extending between the first and second source/drain bodies; forming a trench beside the first source/drain region by etching the substrate such that a lower portion of the trench undercuts the first source/drain region; forming a liner on the trench; forming an opening in the liner underneath the first source/drain region; and forming a dummy interconnect in the trench; where the method further includes exposing the dummy interconnect from a backside of the substrate; removing the dummy interconnect selectively to the liner; and forming a buried interconnect of a conductive material in the trench, where the buried interconnect is connected to the first source/drain body via the opening in the liner.