公开(公告)号：US09117666B2

公开(公告)日：2015-08-25

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/469 ,  H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。

公开(公告)号：US11031253B2

公开(公告)日：2021-06-08

申请号：US16574902

申请日：2019-09-18

Applicant: IMEC VZW

Inventor： Quoc Toan Le ,  Henricus Philipsen ,  Frank Holsteyns

IPC: H01L21/3213 ,  H01L21/311

Abstract: A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

公开(公告)号：US20150170910A1

公开(公告)日：2015-06-18

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。