公开(公告)号：US20140141355A1

公开(公告)日：2014-05-22

申请号：US13949732

申请日：2013-07-24

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Hsiao-Feng HUANG ,  Ping-Chen CHEN ,  Chun-Hsiang WEN ,  Wei-Jen LIU

IPC: H01G11/38 ,  H01M4/96 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04

CPC classification number: H01M4/583 ,  B05D1/42 ,  B05D3/148 ,  H01G11/36 ,  H01G11/38 ,  H01G11/86 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/621 ,  H01M4/624 ,  H01M10/0525 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: The disclosure provides a graphene electrode, an energy storage device employing the same, and a method for fabricating the same. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.

Abstract translation: 本公开提供了一种石墨烯电极，采用该石墨烯电极的能量存储装置及其制造方法。 石墨烯电极包括金属箔，非掺杂石墨烯层和杂原子掺杂石墨烯层。 特别地，通过非掺杂石墨烯层将杂原子掺杂的石墨烯层与金属箔分离。

公开(公告)号：US20170162873A1

公开(公告)日：2017-06-08

申请号：US15433612

申请日：2017-02-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Hsiao-Feng HUANG ,  Ping-Chen CHEN ,  Chun-Hsiang WEN ,  Wei-Jen LIU

IPC: H01M4/583 ,  H01G11/36 ,  H01G11/86 ,  B05D1/42 ,  H01M4/62 ,  H01M4/04 ,  H01M4/1393 ,  B05D3/14 ,  H01G11/38 ,  H01M10/0525

CPC classification number: H01M4/583 ,  B05D1/42 ,  B05D3/148 ,  H01G11/36 ,  H01G11/38 ,  H01G11/86 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/621 ,  H01M4/624 ,  H01M10/0525 ,  Y02E60/13

Abstract: A graphene electrode, an energy storage device employing the same, and a method for fabricating the same are provided. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.

公开(公告)号：US20140362373A1

公开(公告)日：2014-12-11

申请号：US14164742

申请日：2014-01-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ding-Zheng LIN ,  Tsung-Dar CHENG ,  Hsiao-Feng HUANG ,  Ping-Chen CHEN

IPC: G01N21/65

CPC classification number: G01N21/658

Abstract: The disclosure provides a surface-enhanced Raman scattering substrate, including: a surface-enhanced Raman scattering (SERS)-active substrate; a patterned hydrophilic region and a patterned hydrophobic region formed on the SERS-active substrate, wherein a water contact angle difference between the patterned hydrophilic region and the patterned hydrophobic region is in a range from about 29 degrees to about 90 degrees.

Abstract translation: 本公开提供了表面增强拉曼散射基底，包括：表面增强拉曼散射（SERS）活性基底; 图案化的亲水区域和形成在SERS活性基底上的图案化疏水区域，其中图案化亲水区域和图案化疏水区域之间的水接触角差在约29度至约90度的范围内。