公开(公告)号：US20170162873A1

公开(公告)日：2017-06-08

申请号：US15433612

申请日：2017-02-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Hsiao-Feng HUANG ,  Ping-Chen CHEN ,  Chun-Hsiang WEN ,  Wei-Jen LIU

IPC: H01M4/583 ,  H01G11/36 ,  H01G11/86 ,  B05D1/42 ,  H01M4/62 ,  H01M4/04 ,  H01M4/1393 ,  B05D3/14 ,  H01G11/38 ,  H01M10/0525

CPC classification number: H01M4/583 ,  B05D1/42 ,  B05D3/148 ,  H01G11/36 ,  H01G11/38 ,  H01G11/86 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/621 ,  H01M4/624 ,  H01M10/0525 ,  Y02E60/13

Abstract: A graphene electrode, an energy storage device employing the same, and a method for fabricating the same are provided. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.

公开(公告)号：US20140141355A1

公开(公告)日：2014-05-22

申请号：US13949732

申请日：2013-07-24

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Hsiao-Feng HUANG ,  Ping-Chen CHEN ,  Chun-Hsiang WEN ,  Wei-Jen LIU

IPC: H01G11/38 ,  H01M4/96 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04

CPC classification number: H01M4/583 ,  B05D1/42 ,  B05D3/148 ,  H01G11/36 ,  H01G11/38 ,  H01G11/86 ,  H01M4/0402 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/621 ,  H01M4/624 ,  H01M10/0525 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: The disclosure provides a graphene electrode, an energy storage device employing the same, and a method for fabricating the same. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.

Abstract translation: 本公开提供了一种石墨烯电极，采用该石墨烯电极的能量存储装置及其制造方法。 石墨烯电极包括金属箔，非掺杂石墨烯层和杂原子掺杂石墨烯层。 特别地，通过非掺杂石墨烯层将杂原子掺杂的石墨烯层与金属箔分离。

公开(公告)号：US20180127649A1

公开(公告)日：2018-05-10

申请号：US15806995

申请日：2017-11-08

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yi-Chun LIU ,  Yu-Yang SU ,  Chun-Hsiang WEN

IPC: C09K11/70 ,  B22F1/02 ,  B22F1/00

CPC classification number: C09K11/703 ,  B22F1/0018 ,  B22F1/02 ,  B22F2301/25 ,  B22F2304/054 ,  B82Y20/00 ,  B82Y40/00 ,  Y10S977/774 ,  Y10S977/813 ,  Y10S977/815 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/95

Abstract: A method for manufacturing a quantum dot and a quantum dot are provided. The method includes adding a core semiconductor precursor solution into a seed composition solution. The seed composition solution includes a seed composition, and the seed composition is a dendrimer-metal nanoparticle composite. The core semiconductor precursor solution includes a first semiconductor ion and a second semiconductor ion. The method also includes carrying out a first synthesis reaction to form a core semiconductor material wrapping the seed composition. The core semiconductor material is formed by combining the first semiconductor ion with the second semiconductor ion.